current sensor AKM CQ209B featuring quantum well ultra thin film InAs Hall sensor and electrical isolation
Product Overview
The CQ-209B is an open-type current sensor that utilizes a quantum well ultra-thin film InAs Hall sensor to provide high-accuracy and high-speed AC/DC current sensing. Its analog voltage output is directly proportional to the measured current. The integrated AI-Shell package, containing the Hall sensor, magnetic core, and primary conductor, ensures a space-saving and highly reliable solution. Key features include electrical isolation, 5V single supply operation, ratiometric output, low variation in sensitivity and offset voltage, low noise, and a fast response time. It is suitable for applications requiring precise and rapid current monitoring.
Product Attributes
- Brand: Asahi Kasei Microdevices (AKM)
- Sensor Type: Hall Sensor
- Hall Element Material: Quantum well ultra-thin film InAs (Indium Arsenide)
- Package Type: AI-Shell, Surface Mount
- Certifications: RoHS compliant, Halogen free
- Lead Finish: 100% Tin
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Units | Notes |
|---|---|---|---|---|---|---|
| Model | CQ-209B | |||||
| Supply Voltage | VDD | 4.5 | 5.0 | 5.5 | V | |
| Output Current | IOUT | -0.5 | 0.5 | mA | VOUT | |
| Output Load Capacitance | CL | 100 | pF | VOUT | ||
| Operating Ambient Temperature | Ta | -40 | 90 | C | ||
| Maximum Primary Current (RMS) | IRMSmax | -20 | 0 | A | Ta=40~90C | |
| Current Consumption | IDD | 9 | mA | No Loads | ||
| Sensitivity | Vh | 112.7 | 115.0 | 117.3 | mV/A | * |
| Offset Voltage | Vof | 4.440 | 4.550 | 4.660 | V | IIN=0A * |
| Linear Sensing Range | INS | -35 | 0 | A | ||
| Linearity Error | -1 | 1 | %F.S. | * | ||
| Rise Response Time | tr | 1 | s | IIN 90% VOUT 90%, CL=100pF | ||
| Fall Response Time | tf | 1 | s | IIN 10% VOUT 10%, CL=100pF | ||
| Output Noise | VNrms | 2.1 | mVrms | ** | ||
| Maximum Temperature Drift of Sensitivity | Vh-dmax | 1 | % | Variation ratio to Vh(Ta=35C), Ta=35~90C | ||
| 2 | % | Variation ratio to Vh(Ta=35C), Ta=40~35C | ||||
| Maximum Temperature Drift of Offset voltage | Vof-dmax | 30 | mV | Variation from Vof(Ta=35C), Ta=40~90C, IIN=0A | ||
| Ratiometricity Error of Sensitivity | Vh-R | -1 | 1 | % | VDD=4.5V~5.5V ** | |
| Ratiometricity Error of Offset Voltage | Vof-R | -1 | 1 | % | VDD=4.5V~5.5V, IIN=0A ** | |
| Primary Conductor Resistance | R1 | 340 | ||||
| Isolation Voltage | VINS | 2.5 | kV | AC 50/60Hz, 60s ** | ||
| Isolation Resistance | RINS | 500 | M | DC 1kV ** | ||
| Storage Temperature | Tstg | -40 | 125 | C |
* These parameters can drift by the values described in Reliability Tests section over the lifetime of the product.
** These characteristics are guaranteed by design.
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