Small size Hall effect current sensor AKM CQ2332 with AI Shell package and single 5V supply operation
Product Overview
The CQ-2332 is a high-speed, small-sized, open-type current sensor that utilizes a Quantum Well ultra-thin film InAs (Indium Arsenide) Hall sensor. This advanced technology enables high-accuracy and high-speed sensing of both AC and DC currents. The sensor is housed in a simple AI-Shell package, integrating the Hall sensor, magnetic core, and primary conductor for space-saving and enhanced reliability. It offers electrical isolation between the primary conductor and the sensor signal, operates on a single 5V supply, and provides a ratiometric analog voltage output proportional to the measured current. Key advantages include low variation and temperature drift of sensitivity and offset voltage, low noise output, and a fast response time. The CQ-2332 is designed for applications requiring precise current monitoring with excellent performance characteristics.
Product Attributes
- Brand: AKM (Asahi Kasei Microdevices Corporation)
- Sensor Type: Hall effect, open-type
- Hall Sensor Material: Quantum well ultra-thin film InAs (Indium Arsenide)
- Package Type: AI-Shell
- Certifications: IEC/UL 60950-1, UL 508, CSA C22.2 No. 14 (IEC 62109 certification pending)
- Environmental: Halogen free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units | Notes |
|---|---|---|---|---|---|---|---|
| Supply Voltage | VDD | 4.5 | 5.0 | 5.5 | V | ||
| Maximum Primary Current (RMS) | IRMSmax | 50 | 50 | A | |||
| Current Consumption | IDD | No loads | 8.3 | 11 | mA | ||
| Sensitivity | Vh | See Figure 5 | 99.0 | 100.0 | 101.0 | mV/A | Note 1 |
| Offset Voltage | Vof | IIN = 0A | 2.480 | 2.500 | 2.520 | V | Note 1 |
| Linear Sensing Range | INS | 21 | 21 | A | |||
| Linearity Error | See Figure 5 | 1 | 1 | %F.S. | Note 1 | ||
| Rise Response Time | tr | CL = 100pF, See Figure 8 | 1 | s | |||
| Fall Response Time | tf | CL = 100pF, See Figure 8 | 1 | s | |||
| Bandwidth | fT | 3dB, CL = 100pF | 300 | kHz | |||
| Output Noise | VNrms | 100Hz to 4MHz | 1.2 | mVrms | |||
| Temperature Drift of Sensitivity | Vh-dmax | Ta = 40 to 110C, See Figure 6 | 0.5 | % | |||
| Temperature Drift of Offset Voltage | Vof-dmax | Ta = 40 to 110C, IIN = 0A, See Figure 7 | 23 | mV | |||
| Ratiometric Error of Sensitivity | Vh-R | VDD = 4.5V to 5.5V | 1 | 1 | % | Note 2 | |
| Ratiometric Error of Offset Voltage | Vof-R | VDD = 4.5V to 5.5V, IIN = 0A | 0.7 | 0.7 | %F.S. | Note 2 | |
| Total Accuracy | ETO | Ta = 40 to 110C | 1.3 | %F.S. | Note 3 | ||
| Primary Conductor Resistance | R1 | 100 | |||||
| Isolation Voltage | VINS | AC 50/60Hz, 60sec | 3 | kV | Note 2 | ||
| Isolation Resistance | RINS | DC 1kV | 500 | M | Note 2 | ||
| Clearance Distance | dCL | between primary and secondary | 13.3 | mm | Note 2 | ||
| Creepage Distance | dCP | between primary and secondary | 13.3 | mm | Note 2 | ||
| Operating Ambient Temperature | Ta | 40 | 110 | C | |||
| Storage Temperature | Tstg | 40 | 150 | C | WARNING |
Notes:
Note 1: These parameters can drift by the values in 14. Reliability Tests after reflow and over the lifetime of this product.
Note 2: These parameters are guaranteed by design.
Note 3: Total accuracy ETO is calculated by the equation: ETO = |100 (Vh_meas 100) / 100| + |100 (Vof_meas Vof_meas_35) / (100 21 2)| + |meas|.
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