AC DC current sensor AKM CQ209D with ultra thin film InAs Quantum Well Hall sensor and fast response time
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The CQ-209D is an open-type current sensor utilizing an ultra-thin film InAs Quantum Well Hall sensor for high-accuracy and high-speed AC/DC current sensing. Its compact AI-Shell package integrates the Hall sensor, magnetic core, and primary conductor, offering space-saving and high reliability. Key features include electrical isolation, 5V single supply operation, ratiometric output, low variation and temperature drift in sensitivity and offset voltage, low noise output, fast response time, and a small-sized surface mount package that is halogen-free. It is suitable for applications requiring precise current monitoring.
Product Attributes
- Brand: Asahi Kasei Microdevices (AKM)
- Model: CQ-209D
- Package Type: AI-Shell, Small-sized surface mount, Halogen free
- Material: Indium Arsenide (InAs) Quantum Well for Hall sensor, Tin plating for terminals
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Units | Notes |
|---|---|---|---|---|---|---|
| Supply Voltage | VDD | 4.5 | 5.0 | 5.5 | V | |
| Output Current | IOUT | 0.5 | mA | VOUT | ||
| Output Load Capacitance | CL | 100 | pF | VOUT | ||
| Operating Ambient Temperature | Ta | -40 | 90 | C | ||
| Maximum Primary Current (RMS) | IRMSmax | -20 | 20 | A | Ta=40~90C | |
| Current Consumption | IDD | 9 | mA | No Loads | ||
| Sensitivity | Vh | 49.0 | 50.0 | 51.0 | mV/A | |
| Offset Voltage | Vof | 2.500 | V | IIN=0A | ||
| Linear Sensing Range | INS | -41 | 41 | A | ||
| Linearity Error | -1 | 1 | %F.S. | |||
| Rise Response Time | tr | 1 | s | IIN 90% VOUT 90%, CL=100pF | ||
| Fall Response Time | tf | 1 | s | IIN 10% VOUT 10%, CL=100pF | ||
| Bandwidth | fT | 400 | kHz | -3dB, CL=100pF | ||
| Output Noise | VNrms | 2.1 | mVrms | |||
| Temperature Drift of Sensitivity at High Temperature | Vh-dH | 1 | % | Variation ratio to Vh(Ta=35C), Ta=35~90C | ||
| Maximum Temperature Drift of Sensitivity at Low Temperature | Vh-dLmax | 2 | % | Variation ratio to Vh(Ta=35C), Ta=40~35C | ||
| Maximum Temperature Drift of Offset voltage | Vof-dmax | 14.5 | mV | Variation from Vof(Ta=35C), Ta=40~90C, IIN=0A | ||
| Ratiometricity Error of Sensitivity | Vh-R | -1 | 1 | % | VDD=4.5V~5.5V | |
| Ratiometricity Error of Offset Voltage | Vof-R | -1 | 1 | % | VDD=4.5V~5.5V, IIN=0A | |
| Primary Conductor Resistance | R1 | 340 | ||||
| Isolation Voltage | VINS | 2.5 | kV | AC 50/60Hz, 60s | ||
| Isolation Resistance | RINS | 500 | M | DC 1kV | ||
| Supply Voltage (Absolute Max) | VDD | -0.3 | 6 | V | ||
| Analog Output Current (Absolute Max) | IOUT | -1 | 1 | mA | VOUT | |
| Storage Temperature | Tstg | -40 | 125 | C |
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