Ams as5013 iqft integrated hall sensor ic supporting lateral displacement detection up to 2mm radius
Product Overview
The AS5013 is a low-power integrated Hall sensor IC designed for human interface applications, particularly in smart navigation key systems. It offers on-chip processing for rapid development cycles, eliminating the need for complex host processor integration. The single-chip IC features 5 Hall sensing elements for detecting lateral displacement up to 2mm, a high-resolution ADC, XY coordinate and motion detection engine, and a smart power management controller. It communicates position coordinates and magnetic field information via a 2-wire IC interface. Ideal for battery-operated devices like mobile phones and smart handheld devices, it supports contactless push-button functionality and motion detection.
Product Attributes
- Brand: ams OSRAM
- Product Name: AS5013
- Package: QFN 4mmx4mmx0.55mm
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units | Description |
|---|---|---|---|---|---|---|
| Lateral Movement Radius | dx+dy | 2 | mm | Up to 2mm radius | ||
| Resolution (X and Y) | 8 | bit | 8-bit resolution | |||
| Current Consumption (Standby) | 3 | A | Automatic low-power mode | |||
| Operating Voltage | 2.7 | 3.6 | V | Core supply voltage | ||
| Peripheral Supply Voltage | 1.7 | V | Down to 1.7V | |||
| IC Interface | High-speed IC interface | |||||
| Raw Hall Output | 12 | bit | 12-bit raw hall output | |||
| Package | QFN 4mmx4mmx0.55mm | |||||
| Operating Temperature | -20 | 80 | C | Ambient temperature range | ||
| Storage Temperature | -55 | 125 | C | |||
| Power-up Time (Analog) | 1000 | s | Step on VDD to Data_Ready | |||
| Conversion Time (X/Y Coordinate) | 450 | s | Read X/Y coordinate IC ACK bit to Data_Ready | |||
| Wakeup Time (Nominal) | 20 | 320 | ms | |||
| Magnet Type | 2 | 3 | mm | Cylindrical; axial magnetized | ||
| Hall Array Diameter | 2.2 | mm | ||||
| Magnetic Field Strength (BZ) | Measured at chip surface | 30 | 120 | mT | Vertical magnetic field at magnet center | |
| Maximal Average Current Consumption (IDDs) | TAMB = -20C to 50C; Pulsed peaks = IDDf depends on ts[ms] | 3+3760/ts | A | On VDD | ||
| Maximal Average Current Consumption (IDDs) | TAMB = 50C to 80C; Pulsed peaks = IDDf depends on ts[ms] | 10+3760/ts | A | On VDD | ||
| Current Consumption (Idle Mode, no readout) | TAMB = -20C to 50C | 3 | A | On core supply | ||
| Current Consumption (Idle Mode, no readout) | TAMB = 50C to 80C | 10 | A | On core supply | ||
| Current Consumption (Idle Mode, continuous readout) | ts = 450s | 10 | mA | On core supply | ||
| Noise (RMS) | C1..C5 channel data | 100 | T | |||
| Power Supply Rejection Ratio (PSSR) | VDD=3.3V; Temp = 25C; dVDD= 100 mVpp at 10.30kHz | 0.2 | %/100 mV | |||
| High Level Input Voltage (SCL, SDA) | IIC | 0.7 * VDDp | V | |||
| Low Level Input Voltage (SCL, SDA) | IIC | 0.3 * VDDp | V | |||
| High Level Input Voltage (ADDR, RESETn) | JEDEC | 0.65 * VDDp | V | |||
| Low Level Input Voltage (ADDR, RESETn) | JEDEC | 0.35 * VDDp | V | |||
| Capacitive Load (SDA, Standard mode) | 100kHz | 400 | pF | |||
| Capacitive Load (SDA, Fast mode) | 400kHz | 400 | pF | |||
| Capacitive Load (SDA, High speed mode) | 3.4MHz | 100 | pF | |||
| Capacitive Load (INTn, Standard mode) | 100kHz | 30 | pF |
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