InGaAs photodiode California Eastern Laboratories KPDE300-H53-B designed for laser diode aging and near-infrared sensing
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The KPDE300-H53 is an InGaAs photodiode from KYOTO SEMICONDUCTOR, designed for large sensitive area and low voltage operation. It is suitable for applications including laser power monitoring, laser diode and LED aging equipment, near-infrared sensing systems, and power meters. Custom-designed photodiodes are also available.
Product Attributes
- Brand: KYOTO SEMICONDUCTOR
- Product Line: InGaAs Photodiodes
- Model: KPDE300-H53
- Package: TO-CAN
- Certifications: RoHS Directive (2011/65/EU)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Reverse voltage | VR | - | - | 2 | V | - |
| Reverse Current | IR | - | - | 2 | mA | - |
| Forward current | IF | - | - | 2 | mA | - |
| Operating temperature | Topr | -20 | - | 70 | Avoid dew condensation | |
| Storage temperature | Tstg | -20 | - | 80 | Avoid dew condensation | |
| Electrical and Optical characteristics (Ta=25 unless otherwise noted) | ||||||
| Active area | S | - | 3000 | - | m | - |
| Sensitive wavelength | 900 | - | 1700 | nm | - | |
| Responsivity | R | - | 0.8 | - | A/W | VR=1V =1310nm |
| - | 0.9 | 1.0 | A/W | VR=1V =1550nm | ||
| Dark current | ID | - | - | 2 | nA | VR=1V |
| Total capacitance | Ct | - | - | 1 | mV | VR=1V f=1MHz |
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