2x2 silicon photomultiplier array Broadcom AFBR-S4N44P044M featuring NUV-MT technology and high photo-detection efficiency
Product Overview
The Broadcom AFBR-S4N44P044M is a 2x2 silicon photomultiplier (SiPM) array designed for ultra-sensitive precision measurements of single photons. Leveraging NUV-MT technology, it offers enhanced photo-detection efficiency (PDE) and reduced dark count rate and crosstalk compared to previous technologies. Its epoxy encapsulation ensures mechanical stability and transparency down to UV wavelengths, providing broad spectral response with high sensitivity in the blue and near-UV regions. This array is ideal for detecting low-level pulsed light sources, particularly Cherenkov or scintillation light from common organic and inorganic scintillator materials. It is lead-free and RoHS compliant.
Product Attributes
- Brand: Broadcom
- Technology: NUV-MT
- Encapsulation: Epoxy clear mold compound
- Compliance: RoHS, CFM, REACH
- Lead-free: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| SiPM Array Configuration | 2 x 2 | |||
| Array Size | 8.26 x 8.26 | mm | ||
| Cell Pitch | LCELL | 40 | m | |
| High PDE (at 420 nm) | PDE | 63 | % | Measured at peak sensitivity wavelength. Does not include correlated noise. |
| Spectral Range | 250 - 900 | nm | ||
| Peak Sensitivity Wavelength | PK | 420 | nm | |
| Breakdown Voltage | VBD | 32 - 33 | V | Typical at 25C |
| Temperature Coefficient of Breakdown Voltage | VBD/T | 30 | mV/C | |
| Dark Current per Element | ID | 3.3 | A | Typical at 12V OV and 25C |
| Dark Count Rate per Element | DCR | 1.7 | Mcps | Typical at 0.5-p.e. amplitude and 25C |
| Gain | G | 7.3 x 106 | Typical at 12V OV and 25C | |
| Optical Crosstalk | PXTALK | 23 | % | Typical at 12V OV and 25C |
| After-Pulsing Probability | PAD | < 1 | % | Typical at 12V OV and 25C |
| Recharge Time Constant | TFALL | 55 | ns | Typical at 12V OV and 25C |
| Nominal Terminal Capacitance | CT | 580 | pF | Typical at 200 kHz and 25C |
| Temperature Coefficient of Gain | G/T | 1.46 x 104 | /C | Calculated |
| Operating Temperature Range | TA | -20 to +50 | C | Biased at constant voltage = 12V above breakdown. |
| Storage Temperature | TSG | -20 to +60 | C | |
| Soldering Temperature | TSOLD | 245 | C | Reflow solderable. Baking at 125C for 16 hours mandatory prior to soldering. MSL 6 with 4 hours floor life. |
| Lead Soldering Time | tSOLD | 60 | seconds | |
| ESD Capability (HBM) | ESDHBM | 2 | kV | See Absolute Maximum Ratings. |
| ESD Capability (CDM) | ESCDM | 500 | V | See Absolute Maximum Ratings. |
| Operating Overvoltage | VOV | 16 | V | |
| Dark Current Sum at 12V OV | ID | 14 | A | Typical |
Applications
- X-ray and gamma-ray detection
- Nuclear medicine
- Positron emission tomography
- Safety and security
- Physics experiments
- Cherenkov detection
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