Single channel silicon photomultiplier array Broadcom AFBR-S4N22P014M with NUV MT technology and RoHS compliance
Product Overview
The Broadcom AFBR-S4N22P014M is a single-channel silicon photomultiplier (SiPM) array designed for ultra-sensitive precision measurements of single photons. Utilizing NUV-MT technology, it offers enhanced photo-detection efficiency (PDE) and reduced dark count rate and crosstalk compared to NUV-HD technology. Its epoxy encapsulation ensures mechanical stability and robustness while maintaining high transparency down to UV wavelengths, providing broad spectral response with high sensitivity in the blue and near-UV regions. This SiPM is ideal for detecting low-level pulsed light sources, including Cherenkov or scintillation light from common organic and inorganic scintillator materials. It is lead-free and RoHS compliant.
Product Attributes
- Brand: Broadcom
- Technology: NUV-MT
- Certifications: RoHS, CFM, REACH
- Material: Silicon Photomultiplier (SiPM)
- Encapsulation: Epoxy clear mold compound
Technical Specifications
| Feature | Parameter | Min. | Typ. | Max. | Unit | Notes | |
| Geometric Features | Package Outer Dimensions | 2.71 2.48 | mm2 | ||||
| Single Device Area | 2.14 2.14 | mm2 | |||||
| Active Area | 2 2 | mm2 | |||||
| Micro Cell Pitch | LCELL | 40 | m | ||||
| Number of Micro Cells per Element | NCELLS | 2464 | |||||
| SPAD Pitch | 40 | m | |||||
| Pad Layout | See Figure 2 | Anode (A), Cathode (C) | |||||
| Optical and Electrical Features | Spectral Range | 250 | 900 | nm | Figure 5 | ||
| Peak Sensitivity Wavelength | PK | 420 | nm | Figure 5 | |||
| Breakdown Voltage | VBD | 32 | 32.5 | 33 | V | Figure 7 | |
| Temperature Coefficient of Breakdown Voltage | VBD/T | 30 | mV/C | ||||
| Photo-Detection Efficiency (PDE) | 63 | % | at 420 nm, Measured at peak sensitivity wavelength. Does not include correlated noise. Figure 5, Figure 6 | ||||
| Dark Current per Element | ID | 0.98 | A | Measured at 12V OV. Figure 7 | |||
| Dark Count Rate per Element | DCR | 0.5 | Mcps | Measured at 0.5-p.e. amplitude. Does not include delayed correlated events. Figure 8 | |||
| Gain | G | 7.3 | 106 | Figure 9 | |||
| Optical Crosstalk | PXTALK | 23 | % | Figure 10 | |||
| Afterpulsing Probability | PAD | % | |||||
| Environmental and Handling | Operating Temperature | TA | 20 | +60 | C | Biased at constant voltage = 12V above breakdown. | |
| Storage Temperature | TSG | 20 | +60 | C | |||
| Soldering Temperature | TSOLD | 245 | C | Lead Soldering Time: 60 seconds. See Figure 4 for Reflow Soldering Profile. | |||
| Electrostatic Discharge (ESD) | HBM | ESD HBM | 2 | kV | |||
| CDM | ESD CDM | 500 | V | ||||
| Operating Overvoltage | VOV | 16 | V |
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