4x4 Silicon Photomultiplier Array Broadcom AFBR-S4N44P164M for Precision Single Photon Measurements
Product Overview
The Broadcom AFBR-S4N44P164M is a 4x4 silicon photomultiplier (SiPM) array designed for ultra-sensitive precision measurements of single photons. Leveraging NUV-MT technology, it offers enhanced photo-detection efficiency (PDE) and reduced dark count rate and crosstalk compared to NUV-HD technology. Its 4 mm pitch allows for tiling to cover larger areas with minimal edge loss. Encased in a highly transparent epoxy mold compound, it exhibits broad spectral response with high sensitivity in the blue and near-UV regions. This array is ideal for detecting low-level pulsed light sources, including Cherenkov or scintillation light from common organic and inorganic scintillator materials. It is lead-free and RoHS compliant.
Product Attributes
- Brand: Broadcom
- Technology: NUV-MT
- Encapsulation: Epoxy clear mold compound
- Compliance: Lead-free, RoHS, CFM, REACH
Technical Specifications
| Feature | Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|---|
| Array Specifications | SiPM Array Configuration | 4x4 | |||
| Array Size | 16.00 16.00 | mm | |||
| Cell Pitch | LCELL | 40 | m | Micro cell pitch | |
| Number of micro cells per element | NCELLS | 8334 | |||
| Package Fill Factor | 84 | % | Active area vs. total package area | ||
| Dark current sum at 12V OV | ID | 53 | A | Sum of dark current at 12V Overvoltage | |
| Optical and Electrical Features | Spectral Range | 250 900 | nm | ||
| Peak Sensitivity Wavelength | PK | 420 | nm | ||
| Breakdown Voltage | VBD | 32.5 | V | Typical value | |
| Photo-detection Efficiency (PDE) | PDE | 63 | % | At 420 nm, measured at peak sensitivity wavelength, excluding correlated noise | |
| Dark Count Rate per element | DCR | 1.7 | Mcps | At 0.5-p.e. amplitude, excluding delayed correlated events | |
| Gain | G | 7.3 106 | |||
| Optical Crosstalk | PXTALK | 23 | % | ||
| Afterpulsing Probability | PAD | < 1 | % | ||
| Recharge time constant | TFALL | 55 | ns | ||
| Nominal terminal capacitance | CT | 580 | pF | Measured using input sine wave f = 200 kHz, Vin = 500 mV | |
| Temperature coefficient of gain | G/T | 1.46 104 | /C | Calculated from gain dependence on V and breakdown voltage temperature coefficient | |
| Absolute Maximum Ratings | Storage Temperature | TSG | 20 to +60 | C | |
| Operating Temperature | TA | 20 to +50 | C | Biased at constant voltage = 12V above breakdown | |
| Soldering Temperature | TSOLD | 245 | C | ||
| Lead Soldering Time | tSOLD | 60 | seconds | ||
| Electrostatic Discharge Voltage Capability (HBM) | ESDHBM | 2 | kV | ||
| Electrostatic Discharge Voltage Capability (CDM) | ESDCDM | 500 | V | ||
| Operating Overvoltage | VOV | 16 | V |
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