China Silicon Avalanche Photodiode California Eastern Laboratories KPDA100P-H8-B for High Speed Optical Detection for sale

Silicon Avalanche Photodiode California Eastern Laboratories KPDA100P-H8-B for High Speed Optical Detection

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Product Description

Product Overview

The KPDA100P-H8 is a Silicon Avalanche Photodiode designed for high-speed optical detection. It offers a 1.3GHz response time with a 0.2mm diameter, a 1.2GHz response with a 0.5mm diameter, and a 0.6GHz response with a 1.0mm diameter. This photodiode is suitable for applications requiring high gain, such as short wavelength optical communications, optical measurement, optical sensors, and weak light signal detection. It is housed in a TO-CAN package.

Product Attributes

Brand: KYOSEMI
Product Line: KP-A Si Avalanche Photodiodes
Model: KPDA100P-H8
Package: TO-CAN
Certifications: RoHS Directive (2011/65/EU)

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Absolute Maximum Ratings
Reverse Current	IR	-	-	0.2	mA	-
Forward current	IF	-	-	10	mA	-
Operating temperature	Topr	-40	-	+85		Avoid dew condensation
Storage temperature	Tstg	-40	-	+125		Avoid dew condensation
Electrical and Optical characteristics (Ta=25 unless otherwise noted)
Active area	D	-	1.0	-	mm	-
Sensitive wavelength		400	780(P)	1000	nm	-
Responsivity	R	0.4	0.45	-	A/W	M=1, =850nm
Dark current	ID	-	30	1000	pA	VR=50V
Breakdown voltage	VB	80	120	200	V	IR=100A
Temperature coefficient of VB	VB/T	-	-0.55	-	V/	-
Terminal capacitance	Ct	-	5.5	7	pF	VR=0.9VB f=1MHz
Cutoff frequency	fc	-	0.6	-	GHz	M=100, RL=50, =850nm