California Eastern Laboratories KPDEA005-56F-B InGaAs Avalanche Photodiode Suitable for SONET and GPON Applications
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Product Description
Product Overview
The KPDEA005-56F is an InGaAs Avalanche Photodiode from KYOTO SEMICONDUCTOR, designed for high-speed applications up to 2.5Gbps. It features low dark current and high sensitivity, making it suitable for SONET and G-PON/GE-PON systems. The photodiode is housed in a 5.6mm TO-CAN package with a flat window cap.
Product Attributes
- Brand: KYOTO SEMICONDUCTOR
- Product Line: KP-A InGaAs Avalanche Photodiodes
- Package Type: TO-CAN (5.6mm)
- Window Type: Flat window cap
- Compliance: RoHS Directive (2011/65/EU)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Reverse Current | IR | - | - | 2 | mA | - |
| Forward current | IF | - | - | 10 | mA | - |
| Operating temperature | Topr | -40 | - | +85 | Avoid dew condensation | |
| Storage temperature | Tstg | -40 | - | +85 | Avoid dew condensation | |
| Electrical and Optical Characteristics (Ta=25 unless otherwise noted) | ||||||
| Active area | D | - | 0.055 | - | mm | - |
| Bandwidth | BW | - | - | 3.0 | GHz | M=10 |
| Responsivity | R | 0.85 | 0.95 | 0.95 | A/W | =1310nm, M=1 |
| - | - | 1.05 | =1550nm, M=1 | |||
| Dark current | ID | - | 10 | 50 | nA | VR=VB x 0.9 |
| Breakdown voltage | VB | 35 | 45 | 55 | V | ID=10A |
| Temperature coefficient of VB | VB/T | 0.08 | 0.1 | 0.12 | V/ | - |
| Chip capacitance | Cchip | - | 0.38 | 0.5 | pF | f=1MHz |
| Total capacitance | Ct | - | 0.68 | 0.8 | pF | f=1MHz |
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