Infrared detector LITEON LTR-3208E featuring special dark plastic package for remote control and alarm

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Product Description

Product Overview

The Lite-On LTR-3208E is a phototransistor designed for infrared applications. It features a special dark plastic package that effectively cuts visible light, ensuring high sensitivity for detecting infrared signals. This component is suitable for a wide range of applications including remote controllers, IR wireless data transmission, and security alarms. Lite-On offers a comprehensive line of discrete infrared components to meet diverse market needs.

Product Attributes

Brand: LITE-ON
Origin: Taiwan, R.O.C.
Product Type: Infrared Detector (Phototransistor)
Package Material: Special dark plastic
Visible Light Cutoff: Yes
Sensitivity: High

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test Condition	Bin No
Collector-Emitter Breakdown Voltage	V(BR)CEO			30	V	IC = 1mA, Ee = 0mW/cm
Emitter-Collector Breakdown Voltage	V(BR)ECO			5	V	IE = 100A, Ee = 0mW/cm
Collector Emitter Saturation Voltage	VCE(SAT)		0.1	0.4	V	IC = 100A, Ee = 1mW/cm
Rise Time	Tr			10	S	Vcc=5V, Ic=1mA, RL = 1K
Fall Time	Tf			15	S	Vcc=5V, Ic=1mA, RL = 1K
Collector Dark Current	Iceo			100	nA	VCE = 10V, Ee = 0mW/cm
On State Collector Current	IC(ON)	0.64		1.68	mA	VCE = 5V, Ee = 1mW/Cm, =940nm	BIN A
On State Collector Current	IC(ON)	1.12		2.16	mA	VCE = 5V, Ee = 1mW/Cm, =940nm	BIN B
On State Collector Current	IC(ON)	1.44		2.64	mA	VCE = 5V, Ee = 1mW/Cm, =940nm	BIN C
On State Collector Current	IC(ON)	1.76		3.12	mA	VCE = 5V, Ee = 1mW/Cm, =940nm	BIN D
On State Collector Current	IC(ON)	2.08		3.60	mA	VCE = 5V, Ee = 1mW/Cm, =940nm	BIN E
On State Collector Current	IC(ON)	2.40			mA	VCE = 5V, Ee = 1mW/Cm, =940nm	BIN F
Power Dissipation				100	mw	TA=25
Collector-Emitter Voltage				30	V	TA=25
Emitter-Collector Voltage				5	V	TA=25
Operating Temperature Range		-40		85
Storage Temperature Range		-55		100
Lead Soldering Temperature [1.6mm(.063") From Body]				260	for 5 Seconds