consumption magnetic switch Littelfuse LF11115TMR with on chip voltage generator and comparator circuitry
Product Description
The LF11115TMR is a digital bipolar magnetic switch utilizing Tunneling Magnetoresistance (TMR) and CMOS technology. It offers high sensitivity, high speed, and low power consumption, featuring an integrated TMR magnetic sensor and CMOS signal processing circuitry. The device includes an on-chip TMR voltage generator, amplifier, comparator, and Schmitt trigger for noise rejection. Its push-pull CMOS output and X-axis sensing direction, combined with an internal band gap regulator for temperature-compensated voltage, allow for a wide supply voltage range. Key advantages include ultra-low power consumption (200nA), fast response, accurate switching points, excellent thermal stability, and immunity to stray magnetic fields. The output switches low when the magnetic field exceeds the operate point (BOP) and high when it falls below the release point (BRP). Applications include proximity detection, utility meters, speed sensing, battery-powered devices, and rotary sensing.
Product Attributes
- Brand: Littelfuse
- Technology: Tunneling Magnetoresistance (TMR)
- Certifications: RoHS compliant
- Package: SOT23-3
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit | Notes |
| Magnetic Characteristics | @TA = +25C, Vcc = 3.0V | Gauss | ||||
| BOP Operation Point | 9 | 17 | 25 | Gauss | ||
| BRP Release Point | -25 | -17 | -9 | Gauss | ||
| BH Hysteresis | 34 | Gauss | ||||
| Electrical Characteristics | @TA = +25C, Vcc = 3.0V | |||||
| VCC Supply Voltage | 1.8 | 3 | 5.5 | V | Operating | |
| VOH Output High Voltage | Vcc - 0.3 | V | ||||
| VOL Output Low Voltage | 0.2 | V | ||||
| ICC Supply Current | 200 | nA | Output Open | |||
| Freq Response Frequency | 50 | Hz | ||||
| Absolute Maximum Ratings | @TA = +25C, unless otherwise specified | |||||
| VCC Supply Voltage | 7.0 | V | ||||
| VRCC Reverse Supply Voltage | 0.3 | V | ||||
| IOUTSINK Output Current | 9.0 | mA | ||||
| B Magnetic Flux Density | 4000 | Gauss | ||||
| VESD ESD level(HBM) | 4 | kV | ||||
| TA Operating Temperature | -40 | 125 | C | |||
| Tstg Storage Temperature | -50 | 150 | C |
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