Ultrafast Timing Silicon Photomultiplier Sensor onsemi MICROFC-30050-SMT-TR1 for Low Light Detection
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
C-Series SiPM Sensors
The ON Semiconductor C-Series Silicon Photomultipliers (SiPM) are low-noise, blue-sensitive, single-photon sensitive sensors designed for high-gain applications. They offer performance characteristics comparable to conventional PMTs but with the practical advantages of solid-state technology, including low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost. These sensors are ideal for ultrafast timing applications, featuring a fast output with a rise time of 300 ps and a pulse width of 600 ps. The C-Series is available in various sensor sizes (1 mm, 3 mm, and 6 mm) and is packaged in a 4-side tileable surface mount (SMT) package compatible with industry-standard, lead-free, reflow soldering processes. Applications include low-light detection and timing-critical measurements.
Product Attributes
- Brand: ON Semiconductor
- Origin: Semiconductor Components Industries, LLC
- Material: Silicon
- Certifications: Compatible with industry standard, lead-free, reflow soldering processes
Technical Specifications
| Parameter | Sensor Size | Microcell Size | Min. | Typ. | Max. | Units | Overvoltage |
| Breakdown Voltage (Vbr) | 1 mm | 10, 20, 35 m | 24.7 | V | |||
| Breakdown Voltage (Vbr) | 3 mm | 20, 35, 50 m | V | ||||
| Breakdown Voltage (Vbr) | 6 mm | 35 m | V | ||||
| Recommended overvoltage Range | 1 mm | 10, 20, 35 m | 1.0 | 5.0 | V | (Voltage above Vbr) | |
| Recommended overvoltage Range | 3 mm | 20, 35, 50 m | 1.0 | 5.0 | V | (Voltage above Vbr) | |
| Recommended overvoltage Range | 6 mm | 35 m | 1.0 | 5.0 | V | (Voltage above Vbr) | |
| Spectral Range | 1 mm | 10, 20, 35 m | 300 | 950 | nm | ||
| Spectral Range | 3 mm | 20, 35, 50 m | 300 | 950 | nm | ||
| Spectral Range | 6 mm | 35 m | 300 | 950 | nm | ||
| Peak Wavelength (p) | 1 mm | 10, 20, 35 m | 420 | nm | |||
| Peak Wavelength (p) | 3 mm | 20, 35, 50 m | 420 | nm | |||
| Peak Wavelength (p) | 6 mm | 35 m | 420 | nm | |||
| PDE at p (Vbr + 2.5 V) | 1 mm | 10 m | 14 | % | |||
| PDE at p (Vbr + 2.5 V) | 1 mm | 20 m | 24 | % | |||
| PDE at p (Vbr + 2.5 V) | 1 mm | 35 m | 31 | % | |||
| PDE at p (Vbr + 5.0 V) | 1 mm | 10 m | 18 | % | |||
| PDE at p (Vbr + 5.0 V) | 1 mm | 20 m | 31 | % | |||
| PDE at p (Vbr + 5.0 V) | 1 mm | 35 m | 41 | % | |||
| PDE at p (Vbr + 2.5 V) | 3 mm | 20 m | 24 | % | |||
| PDE at p (Vbr + 2.5 V) | 3 mm | 35 m | 31 | % | |||
| PDE at p (Vbr + 2.5 V) | 3 mm | 50 m | 35 | % | |||
| PDE at p (Vbr + 5.0 V) | 3 mm | 20 m | 31 | % | |||
| PDE at p (Vbr + 5.0 V) | 3 mm | 35 m | 41 | % | |||
| PDE at p (Vbr + 5.0 V) | 3 mm | 50 m | 47 | % | |||
| PDE at p (Vbr + 2.5 V) | 6 mm | 35 m | 31 | % | |||
| PDE at p (Vbr + 5.0 V) | 6 mm | 35 m | 41 | % | |||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 1 mm | 10 m | 2 105 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 1 mm | 20 m | 1 106 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 1 mm | 35 m | 3 106 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 3 mm | 20 m | 1 106 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 3 mm | 35 m | 3 106 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 3 mm | 50 m | 6 106 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 6 mm | 35 m | 3 106 | ||||
| Dark Current (Vbr + 2.5 V) | 1 mm | 10 m | 1 | 3 | nA | ||
| Dark Current (Vbr + 2.5 V) | 1 mm | 20 m | 5 | 16 | nA | ||
| Dark Current (Vbr + 2.5 V) | 1 mm | 35 m | 15 | 49 | nA | ||
| Dark Current (Vbr + 2.5 V) | 3 mm | 20 m | 50 | 142 | nA | ||
| Dark Current (Vbr + 2.5 V) | 3 mm | 35 m | 154 | 443 | nA | ||
| Dark Current (Vbr + 2.5 V) | 3 mm | 50 m | 319 | 914 | nA | ||
| Dark Current (Vbr + 2.5 V) | 6 mm | 35 m | 618 | 1750 | nA | ||
| Dark Count Rate (Vbr + 2.5 V) | 1 mm | 10, 20, 35 m | 30 | 96 | kHz | ||
| Dark Count Rate (Vbr + 2.5 V) | 3 mm | 20, 35, 50 m | 300 | 860 | kHz | ||
| Dark Count Rate (Vbr + 2.5 V) | 6 mm | 35 m | 1200 | 3400 | kHz | ||
| Rise Time Fast Output | 1 mm | 10, 20, 35 m | 0.3 | ns | |||
| Rise Time Fast Output | 3 mm | 20, 35, 50 m | 0.6 | ns | |||
| Rise Time Fast Output | 6 mm | 35 m | 1.0 | ns | |||
| Signal Pulse Width Fast Output (FWHM) | 1 mm | 10, 20, 35 m | 0.6 | ns | |||
| Signal Pulse Width Fast Output (FWHM) | 3 mm | 20, 35, 50 m | 1.5 | ns | |||
| Signal Pulse Width Fast Output (FWHM) | 6 mm | 35 m | 3.2 | ns | |||
| Microcell recharge time constant | 1 mm | 10 m | 5 | ns | |||
| Microcell recharge time constant | 1 mm | 20 m | 23 | ns | |||
| Microcell recharge time constant | 1 mm | 35 m | 82 | ns | |||
| Microcell recharge time constant | 3 mm | 20 m | 23 | ns | |||
| Microcell recharge time constant | 3 mm | 35 m | 82 | ns | |||
| Microcell recharge time constant | 3 mm | 50 m | 159 | ns | |||
| Microcell recharge time constant | 6 mm | 35 m | 95 | ns | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 1 mm | 10 m | 50 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 1 mm | 20 m | 90 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 1 mm | 35 m | 100 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 3 mm | 20 m | 770 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 3 mm | 35 m | 850 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 3 mm | 50 m | 920 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 6 mm | 35 m | 3400 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 1 mm | 10 m | 1 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 1 mm | 20 m | 1 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 1 mm | 35 m | 1 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 3 mm | 20 m | 20 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 3 mm | 35 m | 12 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 3 mm | 50 m | 7 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 6 mm | 35 m | 48 | pF | |||
| Temperature dependence of Vbr | 1 mm | 10, 20, 35 m | 21.5 | mV/C | |||
| Temperature dependence of Vbr | 3 mm | 20, 35, 50 m | 21.5 | mV/C | |||
| Temperature dependence of Vbr | 6 mm | 35 m | 21.5 | mV/C | |||
| Temperature dependence of Gain (Note 10) | 1 mm | 10, 20, 35 m | -0.8 | %/C | |||
| Temperature dependence of Gain (Note 10) | 3 mm | 20, 35, 50 m | -0.8 | %/C | |||
| Temperature dependence of Gain (Note 10) | 6 mm | 35 m | -0.8 | %/C | |||
| Crosstalk (Vbr + 2.5 V) | 1 mm | 10 m | 0.6 | % | |||
| Crosstalk (Vbr + 2.5 V) | 1 mm | 20 m | 3 | % | |||
| Crosstalk (Vbr + 2.5 V) | 1 mm | 35 m | 7 | % | |||
| Crosstalk (Vbr + 2.5 V) | 3 mm | 20 m | 3 | % | |||
| Crosstalk (Vbr + 2.5 V) | 3 mm | 35 m | 7 | % | |||
| Crosstalk (Vbr + 2.5 V) | 3 mm | 50 m | 10 | % | |||
| Crosstalk (Vbr + 2.5 V) | 6 mm | 35 m | 7 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 1 mm | 10 m | 0.2 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 1 mm | 20 m | 0.2 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 1 mm | 35 m | 0.2 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 3 mm | 20 m | 0.2 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 3 mm | 35 m | 0.2 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 3 mm | 50 m | 0.6 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 6 mm | 35 m | 0.2 | % | |||
| Active area | 1 mm | 1 1 mm | |||||
| Active area | 3 mm | 3 3 mm | |||||
| Active area | 6 mm | 6 6 mm | |||||
| No. of microcells | 1 mm | 10010 | 2880 | ||||
| No. of microcells | 1 mm | 10020 | 1296 | ||||
| No. of microcells | 1 mm | 10035 | 504 | ||||
| No. of microcells | 3 mm | 30020 | 10998 | ||||
| No. of microcells | 3 mm | 30035 | 4774 | ||||
| No. of microcells | 3 mm | 30050 | 2668 | ||||
| No. of microcells | 6 mm | 60035 | 18980 | ||||
| Microcell fill factor | 1 mm | 10010 | 28% | ||||
| Microcell fill factor | 1 mm | 10020 | 48% | ||||
| Microcell fill factor | 1 mm | 10035 | 64% | ||||
| Microcell fill factor | 3 mm | 30020 | 48% | ||||
| Microcell fill factor | 3 mm | 30035 | 64% | ||||
| Microcell fill factor | 3 mm | 30050 | 72% | ||||
| Microcell fill factor | 6 mm | 60035 | 64% | ||||
| Package dimensions | 1 mm | 1.5 1.8 mm | |||||
| Package dimensions | 3 mm | 4 4 mm | |||||
| Package dimensions | 6 mm | 7 7 mm | |||||
| Recommended operating temperature range | -40C | +85C | |||||
| Maximum storage temperature | +105C | ||||||
| Maximum current levels | 1 mm | 6 mA | |||||
| Maximum current levels | 3 mm | 15 mA | |||||
| Maximum current levels | 6 mm | 20 mA |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Changsha Purple Horn E-Commerce Co., Ltd.
Location
2332 Kaibin Commercial Plaza, No. 419 Shaoshan Middle Road, Shazitang Street, Yuhua District, Changsha City, Hunan Province
Contact Person
Coral