Plastic silicon photodiode onsemi QSD2030F with pin structure and high sensitivity in t1 3 4 package

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Product Description

ON Semiconductor QSD2030F Plastic Silicon Photodiode

The ON Semiconductor QSD2030F is a plastic silicon photodiode featuring a PIN photodiode structure within a T-1 3/4 (5 mm lens diameter) package. It offers a wide reception angle of 40, a daylight filter, and high sensitivity with peak sensitivity at 880 nm. The photodiode is constructed with black epoxy material.

Product Attributes

Brand: ON Semiconductor
Part Number: QSD2030F
Package Type: T-1 3/4 (5 mm Lens Diameter)
Package Material and Color: Black Epoxy
Features: PIN Photodiode, Wide Reception Angle (40), Daylight Filter, High Sensitivity

Technical Specifications

Parameter	Test Conditions	Min.	Typ.	Max.	Unit
Operating Temperature		-40		+100	C
Storage Temperature		-40		100	C
Soldering Temperature (Iron)	(1,2,3) 5 s		240		C
Soldering Temperature (Flow)	(1,2) 10 s		260		C
Reverse Breakdown Voltage		50			V
Power Dissipation	(4) Derate linearly 1.33 mW/C above 25C			100	mW
Peak Sensitivity Wavelength			880		nm
Wavelength Sensitivity Range		700		1100	nm
Reception Angle			20
Forward Voltage	IF = 80 mA		1.3		V
Reverse Dark Current	VR = 10 V, Ee = 0			10	nA
Reverse Light Current	Ee = 0.5 mW/cm, VR = 5 V, = 950 nm		15	25	A
Open Circuit Voltage	Ee = 0.5 mW/cm, = 880 nm		420		mV
Temperature Coefficient of VO			+0.6		mV/K
Short Circuit Current	Ee = 0.5 mW/cm, = 880 nm		50		A
Temperature Coefficient of ISC			+0.3		%/K
Capacitance	VR = 0, f = 1 MHz, Ee = 0			15	pF
Rise Time	VR = 5 V, RL = 50 , = 950 nm			5	ns
Fall Time				5	ns