T1 3 4 Package NPN Silicon Phototransistor onsemi QSD124 with Daylight Filter and 12 Reception Angle

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Product Description

Product Overview

The QSD123/124 is an NPN silicon phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. It features a narrow reception angle of 12 and a daylight filter, making it suitable for applications requiring precise light detection. This phototransistor is designed to be matched with emitters from the QED12X/QED22X/QED23X series.

Product Attributes

Brand: onsemi
Package Type: T-1 3/4
Package Material and Color: Black Epoxy
Emitter Type: NPN Silicon Phototransistor
Filter: Daylight Filter
Reception Angle: 12
Matched Emitter Series: QED12X/QED22X/QED23X

Technical Specifications

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings (TA = 25C unless otherwise specified)
TOPR	Operating Temperature		-40		100	C
TSTG	Storage Temperature		-40		100	C
TSOL-I	Soldering Temperature (Iron)	(2,3,4)		240	for 5 sec	C
TSOL-F	Soldering Temperature (Flow)	(2,3)		260	for 10 sec	C
VCE	Collector-Emitter Voltage				30	V
VEC	Emitter-Collector Voltage				5	V
PD	Power Dissipation(1)				100	mW
Electrical/Optical Characteristics (TA = 25C)
PS	Peak Sensitivity Wavelength			880		nm
	Reception Angle			12
ICEO	Collector-Emitter Dark Current	VCE = 10V, Ee = 0			100	nA
BVCEO	Collector-Emitter Breakdown	IC = 1mA	30			V
BVECO	Emitter-Collector Breakdown	IE = 100A	5			V
IC(ON)	On-State Collector Current(5)	Ee = 0.5mW/cm, VCE = 5V	4			mA (QSD123)
IC(ON)	On-State Collector Current(5)	Ee = 0.5mW/cm, VCE = 5V	6			mA (QSD124)
VCE(SAT)	Saturation Voltage(5)	Ee = 0.5mW/cm, IC = 0.5mA		0.4		V
tr	Rise Time	VCC = 5V, RL = 100, IC = 0.2mA		7		s
tf	Fall Time			7		s