Durable onsemi MICRORB-10020-MLP-TR1 SiPM sensor designed for high volume production and reflow soldering
RB-Series SiPM Sensors
The RB-Series SiPM sensors are the second generation of Silicon Photomultipliers (SiPM) from ON Semiconductor, offering enhanced sensitivity in the red and near-infrared (NIR) spectrum. These sensors provide high responsivity, fast signal response, and a low temperature coefficient of operating voltage at a low bias voltage. Packaged in a compact and robust MLP package suitable for reflow soldering, they are designed for high-volume production. SiPM sensors improve upon avalanche photodiodes (APD) and PIN diodes with their high gain and single-photon sensitivity, enabling the detection of low reflectivity targets at long distances, particularly in LiDAR applications. Their 'microcell' structure allows for multi-photon detection with a high dynamic range, overcoming the single-photon limitation of SPADs.
Product Attributes
- Brand: ON Semiconductor
- Product Line: RB-Series
- Technology: Silicon Photomultipliers (SiPM)
- Package Type: MLP (Molded Lead Frame)
- Material: Clear transfer molding compound
- Certifications: MSL 3 for tape & reel (TR), MSL 4 for tape only (TR1)
Technical Specifications
| Model | Microcell Size | Breakdown Voltage (Vbr) (Typical) | Overvoltage (Vov) (Typical) | Spectral Range | Active Area | PDE @ 905 nm (Typical Overvoltage) | Responsivity @ 905 nm (Typical Overvoltage) | Gain (Cathode-anode Output) | Dark Count Rate (Typical) | Dark Current (Typical) | Rise Time (Standard Output) | Microcell Recharge Time Constant | Crosstalk (Typical) | Afterpulsing (Typical) | Package Dimensions |
| MICRORB-10010 | 10 m | 27 V | 10 V | 300 - 1050 nm | 1 mm 1 mm | 4.0 % | 52 kA/W | 0.7 106 | 2.5 MHz | 0.52 A | 1.5 ns | 12 ns | 30 % | 13 % | 1.5 mm 1.8 mm |
| MICRORB-10020 | 20 m | 23 V | 15 V | 300 - 1050 nm | 1 mm 1 mm | 5.6 % | 61 kA/W | 0.9 106 | 2.7 MHz | 0.54 A | 1.0 ns | 21 ns | 22 % | 6 % | 1.5 mm 1.8 mm |
| MICRORB-10035 | 35 m | 25 V | 10 V | 300 - 1050 nm | 1 mm 1 mm | 9.1 % | 240 kA/W | 1.7 106 | 2.6 MHz | 1.5 A | 0.9 ns | 73 ns | 43 % | 1 % | 1.5 mm 1.8 mm |
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