High Sensitivity NPN Phototransistor onsemi QSD123 Featuring Infrared Transparent Black Epoxy Package

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The QSD123 and QSD124 are NPN silicon phototransistors encapsulated in an infrared transparent, black T-1 3/4 package. These devices feature a narrow reception angle of 12, a daylight filter, and high sensitivity. They are designed for applications requiring detection of infrared light.

Product Attributes

Brand: ON Semiconductor (formerly Fairchild Semiconductor)
Package Type: T-1 3/4
Package Material and Color: Black Epoxy
Emitter Type: NPN Silicon Phototransistor
Matched Emitter Series: QED12X/QED22X/QED23X
Features: Narrow Reception Angle, Daylight Filter, High Sensitivity

Technical Specifications

Model	Description	Value	Unit
QSD123, QSD124	Collector-Emitter Voltage (VCE)	30	V
QSD123, QSD124	Emitter-Collector Voltage (VEC)	5	V
QSD123, QSD124	Power Dissipation (PD)	100	mW
QSD123, QSD124	Operating Temperature (TOPR)	-40 to +100	C
QSD123, QSD124	Storage Temperature (TSTG)	-40 to +100	C
QSD123, QSD124	Soldering Temperature (Iron)	240	C (for 5 sec)
QSD123, QSD124	Soldering Temperature (Flow)	260	C (for 10 sec)
QSD123, QSD124	Peak Sensitivity Wavelength (PS)	880	nm
QSD123, QSD124	Reception Angle ()	12
QSD123, QSD124	Collector-Emitter Dark Current (ICEO) (VCE=10V, Ee=0)	100	nA
QSD123, QSD124	Collector-Emitter Breakdown Voltage (BVCEO) (IC=1mA)	30	V
QSD123, QSD124	Emitter-Collector Breakdown Voltage (BVECO) (IE=100A)	5	V
QSD123	On-State Collector Current (IC(ON)) (Ee=0.5mW/cm, VCE=5V)	4	mA
QSD124	On-State Collector Current (IC(ON)) (Ee=0.5mW/cm, VCE=5V)	6	mA
QSD123, QSD124	Saturation Voltage (VCE(SAT)) (Ee=0.5mW/cm, IC=0.5mA)	0.4	V
QSD123, QSD124	Rise Time (tr) (VCC=5V, RL=100, IC=0.2mA)	7	s
QSD123, QSD124	Fall Time (tf)	7	s