High sensitivity infrared phototransistor in black epoxy package onsemi QSE114 for medium wide angle detection

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Product Description

Product Overview

The QSE113/QSE114 is a plastic silicon infrared phototransistor designed for applications requiring medium wide reception angles. Encapsulated in a black, infrared-transparent sidelooker package, this NPN phototransistor offers high sensitivity and features a daylight filter. It is matched with the QEE113 emitter and is suitable for various sensing and detection tasks.

Product Attributes

Brand: ON Semiconductor (formerly Fairchild Semiconductor)
Package Type: Sidelooker
Package Material and Color: Black Epoxy
Emitter Match: QEE113
Features: Daylight Filter, High Sensitivity
Marking: Blue dot on the top side

Technical Specifications

Model	Parameter	Conditions	Min.	Typ.	Max.	Unit
QSE113 / QSE114	Operating Temperature (TOPR)		-40		100	C
	Storage Temperature (TSTG)		-40		100	C
	Soldering Temperature (Iron) (TSOL-I)	5 sec		240		C
	Soldering Temperature (Flow) (TSOL-F)	10 sec		260		C
	Collector Emitter Voltage (VCE)				30	V
	Emitter Collector Voltage (VEC)				5	V
	Power Dissipation (PD)	Derate linearly 1.33 mW/C above 25C			100	mW
	Peak Sensitivity (PS)				880	nm
	Reception Angle ()		25
	Collector Emitter Dark Current (ICEO)	VCE = 10 V, Ee = 0			100	nA
	Collector-Emitter Breakdown (BVCEO)	IC = 1 mA		30			V
QSE113	On-State Collector Current (IC(ON))	Ee = 0.5 mW/cm, VCE = 5 V	0.25		1.50	mA
QSE114	On-State Collector Current (IC(ON))	Ee = 0.5 mW/cm, VCE = 5 V	1.00			mA
Saturation Voltage (VCE(SAT))	Ee = 0.5 mW/cm, IC = 0.1 mA			0.4		V
Rise Time (tr)	IC = 1 mA, VCC = 5 V, RL = 100			8		s
Fall Time (tf)				8		s