photointerrupter SHARP GP1S396HCPSF designed for printers camera lens control and mechanical position sensing

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Product Description

Product Overview

The SHARP GP1S396HCPSF is a compact and low-profile transmissive photointerrupter featuring a phototransistor output. Engineered with industry-leading thin molding technology, it offers superior detection accuracy due to its narrow infrared beam slit width of 0.12mm. This device is designed for general-purpose detection of object presence or motion, making it suitable for applications such as printers, camera lens control, and various mechanical position detections. Its compact size and high precision make it an ideal solution for space-constrained designs requiring reliable object detection.

Product Attributes

  • Brand: SHARP
  • Model: GP1S396HCPSF
  • Origin: China
  • Certifications: RoHS directive compliant (2002/95/EC)
  • Material: Black PPA resin (Case), 42 Alloy (Lead frame), Au-Pd-Ni-Cu (Lead frame plating)
  • ODS Materials Compliance: Does not contain CFCS, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane.
  • Halogen Material Compliance: Chlorine < 900ppm, Bromine < 900ppm, Chlorine + Bromine < 1500ppm (Homogeneous material).
  • Chinese RoHS Compliance: Compliant with Management Methods for Control of Pollution Caused by Electronic Information Products Regulation.

Technical Specifications

Feature Specification Unit
Type Transmissive Photointerrupter with Phototransistor Output
Gap Width 1.2 mm
Slit Width (detector side) 0.12 mm
Package Dimensions 2.26 1.4 1.6 mm
Product Mass Approx. 5 mg
Input Forward Current (Max) 30 mA
Input Reverse Voltage (Max) 6 V
Input Power Dissipation (Max) 50 mW
Output Collector-Emitter Voltage (Max) 35 V
Output Emitter-Collector Voltage (Max) 6 V
Output Collector Current (Max) 20 mA
Output Collector Power Dissipation (Max) 50 mW
Total Power Dissipation (Max) 70 mW
Operating Temperature -25 to +85 C
Storage Temperature -40 to +100 C
Soldering Temperature (Max) 300 C
Soldering Time (Max) 3 s
Input Forward Voltage (Typ.) 1.2 V (IF=20mA)
Input Reverse Current (Max) 10 A (VR=3V)
Output Collector Dark Current (Max) 100 nA (VCE=20V)
Output Collector Current (Typ.) 100 to 400 A (VCE=5V, IF=5mA)
Response Time - Rise (Max) 120 s (VCE=5V, Ic=100A, RL=1k)
Response Time - Fall (Max) 120 s (VCE=5V, Ic=100A, RL=1k)
Collector-Emitter Saturation Voltage (Max) 0.4 V (IF=10mA, Ic=40A)
Light Detector Type Phototransistor
Light Detector Material Silicon (Si)
Light Detector Max Sensitivity 920 nm
Light Detector Sensitivity 700 to 1200 nm
Light Detector Response Time 20 s
Light Emitter Type Infrared light emitting diode (non-coherent)
Light Emitter Material GaAs
Light Emitter Max Light Emitting Wavelength 940 nm
Light Emitter I/O Frequency 0.3 MHz
Packing Quantity (Reel) 2,500 pcs./Reel
Packing Quantity (Box) 12,500 pcs./box
Regular Packaged Mass Approx. 700 g

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Changsha Purple Horn E-Commerce Co., Ltd.
Location 2332 Kaibin Commercial Plaza, No. 419 Shaoshan Middle Road, Shazitang Street, Yuhua District, Changsha City, Hunan Province
Contact Person Coral

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