Durable photointerrupter sensor SHARP GP1S51VJ000F featuring black NORYL resin case and RoHS compliance

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Delivery Time: Negotiable
Product Description

Product Overview

The SHARP GP1S51VJ000F is a standard, transmissive photointerrupter designed for non-contact sensing applications. Featuring a phototransistor output and an opposing emitter and detector housed within a case, it offers a gap width of 3mm and a slit width of 0.5mm on the detector side. This device is ideal for general-purpose detection of object presence or motion, commonly found in printers, FAX machines, and optical storage units. Its design includes additional screw fixing holes for enhanced mounting flexibility. The GP1S51VJ000F is lead-free and RoHS directive compliant.

Product Attributes

  • Brand: SHARP
  • Model: GP1S51VJ000F
  • Certifications: RoHS directive compliant
  • Material (Case): Black NORYL resin
  • Material (Lead frame plating): Solder dip (Sn-3Ag-0.5Cu)
  • Origin: Japan, Indonesia or Philippines (Indicated on the packing case)

Technical Specifications

Specification Value Unit
Gap Width 3 mm
Slit Width (detector side) 0.5 mm
Package Dimensions 12.21018 mm
Product Mass approx. 0.7 g
Input Forward Current (IF) 50 mA
Input Peak Forward Current (IFM) 1 A
Input Reverse Voltage (VR) 6 V
Input Power Dissipation (P) 75 mW
Output Collector-Emitter Voltage (VCEO) 35 V
Output Emitter-Collector Voltage (VECO) 6 V
Output Collector Current (IC) 20 mA
Output Collector Power Dissipation (PC) 75 mW
Operating Temperature (Topr) -25 to +85 C
Storage Temperature (Tstg) -40 to +100 C
Soldering Temperature (Tsol) 260 (for 5s or less) C
Input Forward Voltage (VF) (IF=20mA) - / 1.25 / 1.4 V
Input Peak Forward Voltage (VFM) (IFM=0.5A) 3 / 4 V
Input Reverse Current (IR) (VR=3V) - / - / 10 A
Output Collector Dark Current (ICEO) (VCE=20V) - / 1 / 100 nA
Transfer Characteristics Collector Current (IC) (VCE=5V, IF=20mA) 0.5 / - / 5 mA
Transfer Characteristics Collector-Emitter Saturation Voltage (VCE(sat)) (IF=40mA, IC=0.5mA) - / - / 0.4 V
Response Time Rise Time (tr) (VCE=2V, IC=2mA, RL=100) - / 3 / 15 s
Response Time Fall Time (tf) (VCE=2V, IC=2mA, RL=100) - / 4 / 20 s
Photo emitter Material Gallium arsenide (GaAs) -
Photo emitter Max. light emitting wavelength 950 nm
Photo emitter I/O Frequency 0.3 MHz
Photodetector Material Silicon (Si) -
Photodetector Max. Sensitivity wavelength 1200 nm
Photodetector Sensitivity wavelength 400 to 800 nm
Photodetector Response time 3 s

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Changsha Purple Horn E-Commerce Co., Ltd.
Location 2332 Kaibin Commercial Plaza, No. 419 Shaoshan Middle Road, Shazitang Street, Yuhua District, Changsha City, Hunan Province
Contact Person Coral

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