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TO247 package AOS AOK30B120D2 Alpha IGBT featuring fast turn off times and smooth current waveforms

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The AOK30B120D2 is an Alpha IGBT with an integrated diode, designed for high-performance applications. It leverages the latest AlphaIGBT ( IGBT) technology, offering low turn-off switching loss due to fast turn-off times and very smooth turn-off current waveforms that reduce EMI. This device provides better thermal management and high surge current capability, with minimal gate spike due to high input capacitance. It is suitable for applications such as induction cooking, rice cookers, microwave ovens, and other soft switching applications. This product has been designed and qualified for the consumer market.

Product Attributes

  • Brand: Alpha
  • Technology: AlphaIGBT ( IGBT)
  • Package Type: TO247
  • Minimum Order Quantity: 240
  • Revision: 1.0
  • Date: December 2014

Technical Specifications

Parameter Conditions Symbol Min Typ Max Units
Product Summary
Collector-Emitter Voltage V CE 1200 V
Continuous Collector Current TC=100C I C 30 A
Collector-Emitter Saturation Voltage TC=25C V CE(sat) 1.77 2.2 V
Diode Pulsed Current, Limited by TJmax I Fpulse 300 A
Pulsed Collector Current, Limited by TJmax I CSM 200 A
Diode Forward Current TC=25C I F 60 A
Continuous Collector Current TC=25C I C 60 A
Power Dissipation TC=25C P D 340 W
Junction and Storage Temperature Range T J , T STG -55 175 C
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T L 300 C
Thermal Characteristics
Maximum IGBT Junction-to-Case TC=100C R q JC 0.44 C/W
Maximum Diode Junction-to-Case R q JC 1.20 C/W
Maximum Junction-to-Ambient R q JA 40 C/W
Electrical Characteristics
Collector-Emitter Breakdown Voltage TJ=25C BV CES 1200 - - V
Gate-Emitter Threshold Voltage TJ=25C V GE(th) - 1.5 1.8 V
Zero Gate Voltage Collector Current VCE=1200V, VGE=0V I CES - - 10 nA
VGE=0V, IC=30A I CES - - 100 A
Diode Forward Voltage VCE=5V, IC=1mA V F - - 2.2 V
TJ=25C V F - 1.77 - V
TJ=125C V F - 1.6 - V
TJ=175C V F - 1.62 - V
Collector-Emitter Saturation Voltage VGE=15V, IC=30A V CE(sat) - 1.77 2.2 V
TJ=25C V CE(sat) - 1.77 - V
TJ=125C V CE(sat) - 2.2 - V
TJ=175C V CE(sat) - 2.43 - V
Forward Transconductance VCE=20V, IC=30A g FS - 28 - S
Input Capacitance VGE=0V, VCE=25V, f=1MHz C ies - 1900 - pF
Output Capacitance VGE=0V, VCE=25V, f=1MHz C oes - 109 - pF
Reverse Transfer Capacitance VGE=0V, VCE=25V, f=1MHz C res - 32 - pF
Total Gate Charge VGE=15V, IC=30A Q g - 67 - nC
Gate to Emitter Charge VGE=15V, IC=30A Q ge - 16 - nC
Gate to Collector Charge VGE=15V, IC=30A Q gc - 32 - nC
Switching Parameters (Load Inductive, TJ=25C)
Turn-Off Delay Time VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH t D(off) - 115 - ns
Turn-Off Fall Time VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH t f - 130 - ns
Turn-Off Energy VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH E off - 1.28 - mJ
Switching Parameters (Load Inductive, TJ=175C)
Turn-Off Delay Time VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH t D(off) - 140 - ns
Turn-Off Fall Time VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH t f - 200 - ns
Turn-Off Energy VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH E off - 2.15 - mJ

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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