Power Switching N Channel Enhancement Mode Field Effect Transistor Slkor SL100N03 with Low Gate Charge

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Product Description

Product Overview

The SL100N03 is an N-Channel Enhancement Mode Field Effect Transistor designed for power switching applications. It offers excellent package for good heat dissipation, ultra low gate charge, low reverse transfer capacitance, and fast switching capability. Avalanche energy is specified for enhanced reliability.

Product Attributes

Brand: SLKORMicro
Model: SL100N03
Package: TO-252
Type: N-Channel Enhancement Mode Field Effect Transistor

Technical Specifications

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Absolute Maximum Ratings	VDS				30	V
	VGS			±20		V
	TJ				150	°C
	TSTG		-50		155	°C
	IS	Tc=25°C			100	A
	IDM	Tc=25°C			400	A
	ID	Tc=25°C			100	A
Common Ratings	PD	TA=25°C unless otherwise noted			54	W
	EAS	Single pulse avalanche energy			100	mJ
	VGS		±20			V
Electrical Characteristics	BV(BR)DSS	VGS=0V, ID=250μA	30	--	--	V
	IDSS	VDS=30V, VGS=0V	--	--	1	μA
	IGSS	VGS=±20V, VDS=0V	--	--	±100	nA
	VGS(th)	VDS=VGS, ID=250μA	1	--	3	V
	RDS(on)	VGS=10V, ID=40A	--	3	3.5	mΩ
	RDS(on)	VGS=4.5V, ID=30A	--	5	6.5	mΩ
	CISS	VDD=15V, ID=30A, VGS=10V, f=1MHz	--	2550	--	pF
	COSS	VDD=15V, ID=30A, VGS=10V, f=1MHz	--	380	--	pF
	CRSS	VDD=15V, ID=30A, VGS=10V, f=1MHz	--	290	--	pF
Dynamic Electrical Characteristics	Qg	VDD=15V, ID=30A, VGS=10V, RG=12Ω	--	53	--	nC
	Qgs	VDD=15V, ID=30A, VGS=10V, RG=12Ω	--	9	--	nC
	Qgd	VDD=15V, ID=30A, VGS=10V, RG=12Ω	--	13	--	nC
	td(on)	VDD=15V, ID=30A, VGS=10V, RG=12Ω	--	17	--	nS
	tr	VDD=15V, ID=30A, VGS=10V, RG=12Ω	--	43	--	nS
	td(off)	VDD=15V, ID=30A, VGS=10V, RG=12Ω	--	110	--	nS
Switching Characteristics	tf	VDD=15V, ID=30A, VGS=10V, RG=12Ω	--	105	--	nS
Switching Characteristics	VSD	Tj=25°C, Is=40A	--	--	1.2	V