Slkor SL40T65FL

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SL40T65FL is a high-performance component designed for demanding electrical applications. It offers robust performance characteristics suitable for various industrial and power electronics systems.

Key Features:

High breakdown voltage (650V)
Low saturation voltage for efficient power transfer
Fast switching speeds for dynamic applications
Reliable operation at elevated temperatures (up to 175C)

Application Scenarios:

Power factor correction circuits
Inverter applications
Switch-mode power supplies (SMPS)
Motor control systems

Brand

SLKOR

Model

SL40T65FL

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-emitter breakdown voltage	BVces	Ic = 2mA, Ve = 0V	650	-	-	V
Collector-emitter saturation voltage	Vce(sat)	Ic = 40A, Vee = 15V, Tj= 25C	-	1.95	2.4	V
Collector-emitter saturation voltage	Vce(sat)	Ic = 40A, Vee = 15V, Tj= 175C	-	2.3	-	V
Diode forward voltage	VF	Vee =0V, IF=20A, Tj=25C	1.3	1.9	-	V
Diode forward voltage	VF	Vee =0V, IF=20A, Tj=125C	1.15	-	-	V
Diode forward voltage	VF	Vee =0V, IF=20A, Tj=175C	1.1	-	-	V
Gate-emitter threshold voltage	Vge(th)	Ve = Vge, Ic = 0.58mA	4.0	5.0	6.0	V
Zero gate voltage collector current	Ices	Vee = 650V, Tj=25C	-	-	40	uA
Zero gate voltage collector current	Ices	Vee = 650V, Tj=175C	-	-	1000	pA
Gate-emitter leakage current	Iges	Vee = 20V, Vce = 0V	-	-	±100	nA
Transconductance	gfs	Vee =20V, Ic = 40A, Tj=25C	17.0	-	-	S
Total gate charge	Qg	Ic = 40A, Vee = 15V	-	219	-	nC
Gate-emitter charge	Qge	Ic = 40A, Vee = 15V	-	26	-	nC
Gate-collector charge	Qgc	Ic = 40A, Vee = 15V	-	115	-	nC
Input capacitance	Cies	Vee =0V, f=1MHz	-	2818	-	pF
Reverse transfer capacitance	Cres	Vee =0V, f=1MHz	-	131	-	pF
Output capacitance	Coes	Vee =0V, f=1MHz	-	209	-	pF
Internal emitter inductance	Le	measured 5mm from case	-	13.0	-	nH
Short circuit collector current	Iesc	Voe ≥ 10, Vee = 800V	-	180	-	A
Turn-on delay time	td(on)	Vee = 15V, Ve = 400V, Ic = 40A, Re =7.9Ω	-	58	-	ns
Rise time	tr	Vee = 15V, Ve = 400V, Ic = 40A, Re =7.9Ω	-	54	-	ns
Turn-off delay time	td(off)	Vee = 15V, Ve = 400V, Ic = 40A, Re =7.9Ω	-	245	-	ns
Fall time	tf	Vee = 15V, Ve = 400V, Ic = 40A, Re =7.9Ω	-	40	-	ns
Turn-on switching energy	Eon	Inductive Load, Tj = 25C	-	1.15	-	mJ
Turn-off switching energy	Eoff	Inductive Load, Tj = 25C	-	0.35	-	mJ
Total switching energy	Ets	Inductive Load, Tj = 25C	-	1.50	-	mJ
Reverse recovery time	trr	IF = 20A, die/dt = 1000A/μs, Tj = 25C	-	80	-	ns
Reverse recovery current	Irr	IF = 20A, die/dt = 1000A/μs, Tj = 25C	-	25	-	A
Reverse recovery charge	Qrr	IF = 20A, die/dt = 1000A/μs, Tj = 25C	-	1.0	-	μC
Rate of fall of reverse recovery current	di/dt	IF = 20A, Tj = 25C	-	950	-	A/μs

Parameter	Symbol	Conditions	Value	Unit
Switching Loss - Turn-on Energy	Eon	Vce = 400V, Ic = 40A, Vee = 15V, R_G = 7.9Ω, Tj = 175C	7.0	mJ
Switching Loss - Turn-off Energy	Eoff	Vce = 400V, Ic = 40A, Vee = 15V, R_G = 7.9Ω, Tj = 175C	1.0	mJ
Switching Loss - Total Energy	Ets	Vce = 400V, Ic = 40A, Vee = 15V, R_G = 7.9Ω, Tj = 175C	8.0	mJ
Reverse Recovery Time	trr	I = 20A, die/dt = 1000A/ μs, Tj = 175C	180	ns
Reverse Recovery Charge	Qrr	I = 20A, die/dt = 1000A/ μs, Tj = 175C	3.5	μC
Rate of fall of reverse recovery current	di/dt	I = 20A, Tj = 175C	1000	A/μs