Compact Multi Discrete Module Central CMLM8205 TR Featuring P Channel MOSFET and Low VF Schottky Diode
Product Overview
The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module featuring a P-Channel enhancement-mode MOSFET and a low VF Schottky diode in a space-saving SOT-563 surface mount package. This device is engineered for general-purpose small signal applications prioritizing compact size and operational efficiency. Key applications include DC-DC converters and battery-powered portable equipment. It offers a low rDS(on) transistor with a maximum of 3.0 @ VGS=5.0V and a low VF Schottky diode with a maximum of 0.47V @ 0.5A.
Product Attributes
- Brand: CENTRAL SEMICONDUCTOR
- Product Family: Multi Discrete Module
- Package Type: SOT-563
- Marking Code: C85
Technical Specifications
| Specification | Parameter | Value | Units |
|---|---|---|---|
| Case Power Dissipation (TA=25C) | Note 1 | 350 | mW |
| Note 2 | 300 | mW | |
| Note 3 | 150 | mW | |
| Operating and Storage Junction Temperature | |||
| TJ, Tstg | -65 to +150 | C | |
| Thermal Resistance (TA=25C) | JA | 357 | C/W |
| MOSFET Q1 Ratings (TA=25C) | Drain-Source Voltage (VDS) | 50 | V |
| Drain-Gate Voltage (VDG) | 50 | V | |
| Gate-Source Voltage (VGS) | 20 | V | |
| Continuous Drain Current (ID) | 280 | mA | |
| Continuous Source Current (IS) (Body Diode) | 280 | mA | |
| Maximum Pulsed Drain Current (IDM) | 1.5 | A | |
| Maximum Pulsed Source Current (ISM) | 1.5 | A | |
| Schottky Diode D1 Ratings (TA=25C) | Peak Repetitive Reverse Voltage (VRRM) | 40 | V |
| Continuous Forward Current (IF) | 500 | mA | |
| Peak Repetitive Forward Current (IFRM), tp1.0ms | 3.5 | A | |
| Peak Forward Surge Current (IFSM), tp=8.0ms | 10 | A | |
| Gate Leakage Current (IGSSF, IGSSR) VGS=20V, VDS=0 | 100 | nA | |
| Zero Gate Voltage Drain Current (IDSS) VDS=50V, VGS=0 | (TA=25C) | 1.0 | A |
| (TJ=125C) | 500 | A | |
| Breakdown Voltage (BVDSS) VGS=0, ID=10A | 50 | V | |
| Gate Threshold Voltage (VGS(th)) VDS=VGS, ID=250A | 1.0 - 2.5 | V | |
| Drain-Source On-State Voltage (VDS(ON)) | VGS=10V, ID=500mA | 1.5 | V |
| VGS=5.0V, ID=50mA | 0.15 | V | |
| Diode Forward Voltage (VSD) VGS=0, IS=115mA | 1.3 | V | |
| Drain-Source On-Resistance (rDS(ON)) | VGS=10V, ID=500mA | 2.5 | |
| VGS=10V, ID=500mA, TJ=125C | 4.0 | ||
| VGS=5.0V, ID=50mA | 3.0 | ||
| VGS=5.0V, ID=50mA, TJ=125C | 5.0 | ||
| Forward Transconductance (gFS) VDS =10V, ID=200mA | 200 | mS | |
| Capacitance (f=1.0MHz) | Crss VDS=25V, VGS=0 | 7.0 | pF |
| Ciss VDS=25V, VGS=0 | 70 | pF | |
| Coss VDS=25V, VGS=0 | 15 | pF | |
| Switching Time (ton, toff) VDD=30V, VGS=10V, ID=200mA, RG=25, RL=150 | 20 | ns | |
| Diode Reverse Leakage Current (IR) | VR=10V | 30 | A |
| VR=30V | 100 | A | |
| Diode Breakdown Voltage (BVR) IR=500A | 40 | V | |
| Diode Forward Voltage (VF) | IF=100A | 0.13 | V |
| IF=1.0mA | 0.21 | V | |
| IF=10mA | 0.27 | V | |
| IF=100mA | 0.35 | V | |
| IF=500mA | 0.47 | V | |
| Diode Junction Capacitance (CJ) VR=1.0V, f=1.0MHz | 50 | pF | |
| Lead Code | 1) Gate Q1, 2) Source Q1, 3) Cathode D1, 4) Anode D1, 5) Anode D1, 6) Drain Q1 | ||
Note: The CMLM8205 is classified as End of Life (EOL). Please refer to Central Semiconductor for last purchase and shipment dates, and potential minimum order quantities.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.