Hefei Purple Horn E-Commerce Co., Ltd.
                                                                                                           
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Energy semiconductor component ChipNobo BSS84AK215CN with low threshold voltage and AECQ101 qualification

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

This product is a highly energy-efficient semiconductor component designed for high-speed switching applications. It features a low threshold voltage and is qualified under AEC-Q101 standards, making it suitable for demanding automotive environments. Its capabilities include DC/DC conversion, and it is packaged in a compact SOT-23 small outline plastic package with a UL 94V-0 flammability rating. Mounting position is flexible, allowing for any orientation.

Product Attributes

  • Brand: ChipNobo (implied by website and contact information)
  • Package Type: SOT-23 Small Outline Plastic Package
  • Epoxy UL Flammability Rating: 94V-0
  • Mounting Position: Any
  • AEC-Q101 Qualified

Technical Specifications

Parameters Symbol Test Condition Min Typ Max Unit
Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified)
Drain-Source Voltage VDS -50 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID -0.13 A
Pulsed Drain Current (tp<10us) (note1) IDM -0.52 A
Power Dissipation PD 225 mW
Junction Temperature Tj -50 150
Storage Temperature Tstg -50 150
Thermal Resistance From Junction to Ambient (note2) JA 556 /W
Maximum Lead Temperature for Soldering Purposes, Duration for 5 Seconds TL 260
Electrical Characteristics (TA = 25 unless otherwise specified)
Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -50 V
Gate-Threshold voltage (note3) VGS (th) VDS=VGS, ID=-250uA -0.9 -1.6 -2.0 V
Gate-body Leakage IGSS VDS=0V, VGS=20V 5 uA
Zero Gate Voltage Drain current IDSS VDS=-50V, VGS=0V -0.1 uA
VDS=-25V, VGS=0V 10 uA
Drain-Source On-Resistance (note3) RDS(ON) VGS=-5V, ID=-0.1A 5.8 8
VGS=-10V, ID=-0.1A 4.5
Forward trans conductance (note1) gfs VDS=-25V, ID=-0.1A 50 mS
Diode forward voltage VSD IS=0.34A, VGS=0V 1.3 V
Dynamic (note4)
Input capacitance Ciss VDS=5V, VGS=0V,f=1MHz 30 pF
Output capacitance Coss 10 pF
Reverse Transfer capacitance Crss 5 pF
Switching (note3,4)
Turn-on Time td(on) VDD=-15V, RL=50, ID-0.25A 2.5 ns
Rise time tr 1 ns
Turn-off Time td(off) 16 ns
Fall time tf 8 ns
SOURCE-DRAIN DIODE CHARACTERISTICS
Continuous Current IS -0.13 A
Pulsed Current ISM -0.52 A
Diode forward Voltage (note 3) VSD IS=-0.13A, VGS=0V -2.2 V

Notes:

  • 1). Repetitive rating: Pulse width limited by junction temperature.
  • 2). Surface mounted on FR4 board, t 10s
  • 3). Pulse Test: Pulse Width 300us, Duty Cycle2%.
  • 4). Dynamic characteristics are typically measured under specific test conditions and may vary.

For additional information, please visit http://www.chipnobo.com, or consult your nearest Chipnobo sales office.


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Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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