Load Switch MOSFET GL GL5N04 Featuring Low Reverse Transfer Capacitance and High Pulsed Drain Current Capability
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Product Description
Product Overview
The GL5N04 is a Silicon N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for a wide variety of applications including PWM applications, load switches, and power management. The SOT-23-3L package complies with RoHS standards. Key features include fast switching, low gate charge and Rdson, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei electronic technology co., LTD
- Package Type: SOT-23-3L
- Compliance: RoHS standard
- Channel Type: N-Channel
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| Absolute Ratings (Tc= 25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | 40 | V | |
| ID | Continuous Drain Current | 5 | A | |
| ID | Continuous Drain Current | TC = 70 C | 3.8 | A |
| IDMa1 | Pulsed Drain Current | 20 | A | |
| VGS | Gate-to-Source Voltage | ±20 | V | |
| dv/dta3 | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 1.4 | W | |
| TJ,Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=-250µA | 40 | V |
| ΔBVDSS/ΔTJ | Bvdss Temperature Coefficient | ID=-250uA,Reference25 | -- | 0.1 V/ |
| IDSS | Drain to Source Leakage Current | VDS=40,VGS=0V,Ta=25 | -- | 1 µA |
| IDSS | Drain to Source Leakage Current | VDS=32V,VGS=0V,Ta=125 | -- | 250 µA |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | 1 µA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -1 µA |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=2.5A | -- | 30-45 mΩ |
| RDS(ON) | Drain-to-Source On-Resistance | VGS=4.5V,ID=2.5A | -- | 40-60 mΩ |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250µA | 1-2.5 | V |
| Dynamic Characteristics | ||||
| gfs | Forward Transconductance | VDS=15V,ID=5.0A | 10 | S |
| Ciss | Input Capacitance | VGS=0V,VDS=10V, f=1.0MHz | -- | 620 pF |
| Coss | Output Capacitance | -- | 130 pF | |
| Crss | Reverse Transfer Capacitance | -- | 50 pF | |
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | ID=1.0A,VDD=15V, VGS=10V,RG=5.0Ω | -- | 7 ns |
| tr | Rise Time | -- | 21 ns | |
| td(OFF) | Turn-Off Delay Time | -- | 27 ns | |
| tf | Fall Time | -- | 7 ns | |
| Qg | Total Gate Charge | ID=5.0A,VDD=15V, VGS=10V | -- | 10 nC |
| Qgs | Gate to Source Charge | -- | 1.9 nC | |
| Qgd | Gate to Drain (Miller)Charge | -- | 2.8 nC | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode) | -- | 5.0 A | |
| ISM | Maximum Pulsed Current (Body Diode) | -- | 20 A | |
| VSD | Diode Forward Voltage | IS=5.0A,VGS=0V | -- | 1.5 V |
| trr | Reverse Recovery Time | IS=5.0A,Tj = 25°C, dIF/dt=100A/us,VGS=0V | -- | 50 ns |
| Qrr | Reverse Recovery Charge | Pulse width tp≤380µs, δ≤2% | -- | 120 nC |
| RθJA | Junction-to-Ambient | 90 | °C/W | |
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