TO252 Plastic Encapsulate Transistor GOODWORK MJD122 Featuring High DC Current Gain and Damper Diode

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Product Description

Product Overview

The MJD122 M is a TO-252 Plastic-Encapsulate Transistor featuring high DC current gain and a built-in damper diode at the E-C junction. It is electrically similar to the popular TIP122 and complementary to the MJD127.

Product Attributes

Brand: MJD
Package: TO-252

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-base voltage	BVCBO				100	V
Collector-emitter voltage	BVCEO				100	V
Emitter-base voltage	BVEBO				5	V
Collector current (DC)	IC				8	A
Collector current (Pulse)	ICP				8	A
Collector Dissipation (TA =25 )	PC				1.75	W
Collector Dissipation (TC =25 )	PC				20	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		150
Collector cut-off current	ICBO	VCB = 100V, IE = 0			10	A
Collector cut-off current	ICEO	VCE = 50V, IE = 0			10	A
Emitter cut-off current	IEBO	VEB = 5V, IC = 0			2	mA
DC current gain*	hFE	VCE= 4V, IC= 4A		1000
DC current gain*	hFE	VCE= 4V, IC= 8A		500
Collector-emitter saturation voltage*	VCE(sat)	IC =4A, IB = 16mA		2		V
Collector-emitter saturation voltage*	VCE(sat)	IC =8A, IB = 80mA		4		V
Baser-emitter saturation voltage*	VBE(sat)	IC =8A, IB = 80mA		4.5		V
Base-emitter on voltage*	VBE (on)	VCE= 4V, IC= 4A		2.8		V
Output capacitance	Cob	VCB= 10V, f=1MHz			200	pF