Silicon NPN Bipolar Transistor Array Infineon BCM 846S H6327 Suitable For Current Mirror Applications

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Product Description

Product Overview

The BCM846S is a silicon NPN bipolar transistor array designed for current mirror applications. It features a precision-matched transistor pair with a collector current difference of less than or equal to 10%, low collector-emitter saturation voltage, and two internally isolated transistors. This device is Pb-free and RoHS compliant, qualified according to AEC Q101 standards.

Product Attributes

Brand: Infineon Technologies
Complementary Type: BCM856S
Material: Silicon
Certifications: AEC Q101
Package: SOT363
RoHS Compliant: Yes

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Maximum Ratings
Collector-emitter voltage	VCEO	65	V
Collector-emitter voltage	VCES	80	V
Collector-base voltage	VCBO	80	V
Emitter-base voltage	VEBO	6	V
Collector current	IC	100	mA
Peak collector current	ICM	200	mA	tp 10 ms
Total power dissipation	Ptot	250	mW	TS = 115 C
Junction temperature	Tj	150	C
Storage temperature	Tstg	-65 ... 150	C
Thermal Resistance
Junction - soldering point	RthJS	140	K/W	1)
DC Characteristics
Collector-emitter breakdown voltage	V(BR)CEO	65	V	IC = 10 mA, IB = 0 A
Collector-base breakdown voltage	V(BR)CBO	80	V	IC = 10 A, IE = 0 A
Collector-emitter breakdown voltage	V(BR)CES	80	V	IC = 10 A, VBE = 0 A
Emitter-base breakdown voltage	V(BR)EBO	6	V	IE = 10 A, IC = 0 A
Collector-base cutoff current	ICBO	-	A	VCB = 30 V, IE = 0 A
Collector-base cutoff current	ICBO	0.015	A	VCB = 30 V, IE = 0 A, TA = 150 C
Collector-base cutoff current	ICBO	5	A	VCB = 30 V, IE = 0 A, TA = 150 C
DC current gain	hFE	200	-	IC = 10 A, VCE = 5 V
DC current gain	hFE	250 ... 290	-	IC = 2 mA, VCE = 5 V
DC current gain	hFE	450	-	IC = 10 mA, VCE = 5 V
Collector-emitter saturation voltage	VCEsat	90	mV	IC = 10 mA, IB = 0.5 mA
Collector-emitter saturation voltage	VCEsat	200 ... 300	mV	IC = 100 mA, IB = 5 mA
Collector-emitter saturation voltage	VCEsat	650	mV	IC = 100 mA, IB = 5 mA
Base emitter saturation voltage	VBEsat	700	mV	IC = 10 mA, IB = 0.5 mA
Base emitter saturation voltage	VBEsat	900	mV	IC = 100 mA, IB = 5 mA
Base-emitter voltage	VBE(ON)	580 ... 660	mV	IC = 2 mA, VCE = 5 V
Base-emitter voltage	VBE(ON)	700 ... 770	mV	IC = 10 mA, VCE = 5 V
Matching	IC	-10 ... 10	%	IB = 1 A, VCE1 = VCE2 = 1.0V
Matching	IC	-10 ... 10	%	IB = 100 A, VCE1 = VCE2 = 1.0V
AC Characteristics
Transition frequency	fT	250	MHz	IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance	Ccb	0.95	pF	VCB = 10 V, f = 1 MHz
Emitter-base capacitance	Ceb	9	pF	VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance	h11e	4.5	k	IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf. ratio	h12e	2 x 10	-	IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf. ratio	h12e	10 x 10	-	IC = 2 mA, VCE = 5 V, f = 1 kHz
Short-circuit forward current transf. ratio	h21e	330	-	IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit output admittance	h22e	30	S	IC = 2 mA, VCE = 5 V, f = 1 kHz
Noise figure	F	10	dB	IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k