IGBT with 650V Breakdown Voltage and RAPID 1 Diode Infineon IKP08N65F5 Using TRENCHSTOP 5 Technology

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Product Description

Product Overview

The IKP08N65F5 is a high-speed 5th generation FAST IGBT from Infineon, featuring TRENCHSTOPTM 5 technology. It is copacked with a RAPID 1 fast and soft antiparallel diode, offering best-in-class efficiency in hard switching and resonant topologies. With a 650V breakdown voltage and low QG, this DuoPack IGBT is designed for high-speed switching applications and is qualified according to JEDEC standards. It supports a maximum junction temperature of 175C and is Pb-free and RoHS compliant.

Product Attributes

Brand: Infineon
Technology: TRENCHSTOPTM 5
Diode Type: RAPID 1
Certifications: JEDEC, RoHS compliant
Lead Plating: Pb-free

Technical Specifications

Type	VCE	IC	VCEsat, Tvj=25C	Tvjmax	Marking	Package
IKP08N65F5	650V	8A	1.6V	175C	K08EEF5	PG-TO220-3

Parameter	Symbol	Conditions	Value	Unit
Collector-emitter breakdown voltage	V(BR)CES	VGE = 0V, IC = 0.20mA	650	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 8.0A, Tvj = 25C	1.60	V
Diode forward voltage	VF	VGE = 0V, IF = 9.0A, Tvj = 25C	1.45	V
Gate-emitter threshold voltage	VGE(th)	IC = 0.08mA, VCE = VGE	3.2 - 4.8	V
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 25C	- 40.0	A
Gate-emitter leakage current	IGES	VCE = 0V, VGE = 20V	- 100	nA
Transconductance	gfs	VCE = 20V, IC = 8.0A	17.0	S
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	500	pF
Output capacitance	Coes	VCE = 25V, VGE = 0V, f = 1MHz	16	pF
Reverse transfer capacitance	Cres	VCE = 25V, VGE = 0V, f = 1MHz	3	pF
Gate charge	QG	VCC = 520V, IC = 8.0A, VGE = 15V	22.0	nC
Internal emitter inductance	LE	measured 5mm from case	7.0	nH

Parameter	Symbol	Conditions	Value	Unit
Turn-on delay time	td(on)	Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF	10	ns
Rise time	tr	Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF	5	ns
Turn-off delay time	td(off)	Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF	116	ns
Fall time	tf	Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF	20	ns
Turn-on energy	Eon	Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF	0.07	mJ
Turn-off energy	Eoff	Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF	0.02	mJ
Total switching energy	Ets	Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF	0.09	mJ
Diode reverse recovery time	trr	Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s	41	ns
Diode reverse recovery charge	Qrr	Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s	0.14	C
Diode peak reverse recovery current	Irrm	Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s	6.6	A
Diode peak rate of fall of reverse recovery current	dirr/dt	Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s	-160	A/s