Medium power transistor JTD JTD5551 NPN type optimized for amplification and switching applications

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Product Description

Product Overview

The JTD5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the JTD501, offering reliable performance in its intended use cases.

Product Attributes

Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
Marking: G1 (Solid dot indicates Green molding compound device)
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				180	V
Collector-Emitter Voltage	VCEO				160	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				600	mA
Collector Power Dissipation	PC				300	mW
Collector-Base Breakdown Voltage	V(BR)CBO	IC=100A, IE=0	180			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=1mA, IB=0	160			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=10A, IC=0	6			V
Collector Cut-off Current	ICBO	VCB=120V, IE=0			50	nA
Emitter Cut-off Current	IEBO	VEB=4V, IC=0			50	nA
DC Current Gain	hFE(1)	VCE=5V, IC=1mA	80
	hFE(2)	VCE=5V, IC=10mA		100	300
	hFE(3)	VCE=5V, IC=50mA	50
Collector-Emitter Saturation Voltage	VCE(sat)1	IC=10mA, IB=1mA		0.15		V
Collector-Emitter Saturation Voltage	VCE(sat)2	IC=50mA, IB=5mA		0.2		V
Base-Emitter Saturation Voltage	VBE(sat)1	IC=10mA, IB=1mA		1		V
Base-Emitter Saturation Voltage	VBE(sat)2	IC=50mA, IB=5mA		1		V
Transition Frequency	fT	VCE=10V,IC=10mA, f=100MHz		100	300	MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1MHz			6	pF