Leiditech LM 2N7002LT1G Trench Power MV MOSFET N Channel Transistor for Direct Logic Level Interface

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The LM-2N7002LT1G is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. Designed as a voltage-controlled small signal switch, it offers low input capacitance, fast switching speed, and low input/output leakage. This MOSFET is suitable for battery-operated systems, solid-state relays, and direct logic-level interface applications with TTL/CMOS.

Product Attributes

Brand: Leiditech (implied by domain and part number prefix)
Product Type: Enhancement Mode Field Effect Transistor
Channel Type: N-Channel
Technology: Trench Power MV MOSFET

Technical Specifications

Parameter	Symbol	Conditions	Limit	Unit
Product Summary
Drain-source Voltage	VDS		60	V
Drain Current	ID	TA=25 @ Steady State	340	mA
RDS(ON)		VGS=10V	<2.5	ohm
RDS(ON)		VGS=4.5V	<3.0	ohm
Absolute Maximum Ratings
Drain-source Voltage	VDS	(TA=25 unless otherwise noted)	60	V
Gate-source Voltage	VGS		20	V
Drain Current (TA=70 @ Steady State)	ID		272	mA
Pulsed Drain Current	IDM		1.5	A
Total Power Dissipation @ TA=25	PD		350	mW
Thermal Resistance Junction-to-Ambient @ Steady State	RJA		357	/ W
Junction and Storage Temperature Range	TJ ,TSTG		-55+150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS= 0V, ID=250A	60	V
Zero Gate Voltage Drain Current	IDSS	VDS=60V,VGS=0V	1	A
Gate-Body Leakage Current	IGSS1	VGS= 20V, VDS=0V	100	nA
Gate-Body Leakage Current	IGSS2	VGS= 10V, VDS=0V	50	nA
Gate Threshold Voltage	VGS(th)	VDS= VGS, ID=250A	1.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS= 10V, ID=-300mA	2.5
Static Drain-Source On-Resistance	RDS(ON)	VGS= 4.5V, ID=200mA	3.0
Diode Forward Voltage	VSD	IS=300mA,VGS=0V	1.2	V
Maximum Body-Diode Continuous Current	IS		340	mA
Input Capacitance	Ciss	VDS=30V,VGS=0V,f=1MHZ	16	pF
Output Capacitance	Coss	VDS=30V,VGS=0V,f=1MHZ	10	pF
Reverse Transfer Capacitance	Crss	VDS=30V,VGS=0V,f=1MHZ	5.5	pF
Total Gate Charge	Qg	VGS=10V,VDS=30V,ID=0.3A	2.4	nC
Turn-on Delay Time	tD(on)	VGS=10V,VDD=30V, ID=300mA, RGEN=6	5	ns
Turn-off Delay Time	tD(off)	VGS=10V,VDD=30V, ID=300mA, RGEN=6	17	ns
Reverse recovery Time	trr	VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/s	30	ns
Ordering Information
Preferred P/N			LM-2N7002LT1G
Packing Code			LT1G
Minimum Package (pcs)			3000
Inner Box Quantity (pcs)			30000
Outer Carton Quantity (pcs)			120000
Delivery Mode			7" reel