semiconductor component Leiditech 2N7002HW featuring RoHS compliance and 1000V ESD protection for electronics

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Product Description

Product Overview

The 2N7002HW is a semiconductor device designed for various electronic applications. It features RoHS compliance and Halogen Free material, ensuring environmental responsibility. The device offers ESD protection up to 1000V, enhancing its robustness in handling. With a maximum drain-source voltage of 60V and continuous drain current capabilities, it is suitable for switching and amplification tasks in industrial and consumer electronics.

Product Attributes

Compliance: RoHS, Halogen Free
ESD Protection: 1000V
Device Marking: 6C
Packaging: 3000/Tape&Reel
Package Type: SC70(SOT-323)

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
DrainGate Voltage (RGS = 1.0 M)	VDGR			60	Vdc
DrainSource Voltage	VDSS			60	Vdc
GateSource Voltage Continuous	VGS			20	Vdc
GateSource Voltage Pulsed (Note 1)	VGSM			40	Vdc
Drain Current	ID			225	mAdc	TC = 25C
Drain Current	ID			75	mAdc	TC = 100C
Total Device Dissipation, FR5 Board (Note 2)	PD			1.8	W	@ TA = 25C
Derate above 25C				14.8	mW/C
Thermal Resistance, JunctiontoAmbient (Note 2)	RJA		556		C/W
Junction and Storage temperature	TJ,Tstg	-55		150	C
DrainSource Breakdown Voltage (VGS = 0, ID = 10Adc)	VBRDSS	60			Vdc
Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc)	IDSS			1.0	Adc	TJ = 25C
Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc)	IDSS			50	Adc	TJ = 125C
GateBody Leakage Current, Forward (VGS = 20 Vdc)	IGSSF			1.0	Adc
GateBody Leakage Current, Reverse (VGS = - 20 Vdc)	IGSSR			-1.0	Adc
Gate Threshold Voltage (VDS = VGS, ID = 250Adc)	VGS(th)	1.0		2.5	Vdc
OnState Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc)	ID(on)		500		mAdc
Static DrainSource OnState Voltage (VGS = 10 Vdc, ID = 500 mAdc)	VDS(on)		1.4		Vdc
Static DrainSource OnState Voltage (VGS = 5.0 Vdc, ID = 50 mAdc)	VDS(on)		1.8		Vdc
Static DrainSource OnState Resistance (VGS = 10 Vdc, ID = 500 mAdc)	RDS(on)		3.75		Ohms	TC = 25C
Static DrainSource OnState Resistance (VGS = 10 Vdc, ID = 500 mAdc)	RDS(on)		7.5		Ohms	TC = 125C
Static DrainSource OnState Resistance (VGS = 5.0 Vdc, ID = 50 mAdc)	RDS(on)		13.5		Ohms	TC = 25C
Static DrainSource OnState Resistance (VGS = 5.0 Vdc, ID = 50 mAdc)	RDS(on)		13.5		Ohms	TC = 125C
Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mAdc)	gfs		500		mmhos
Input Capacitance	Ciss		17		pF	VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
Output Capacitance	Cobo		10		pF	VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
Reverse Transfer Capacitance	Crss		2.5		pF	VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
Diode Forward OnVoltage (IS = 115 mAdc, VGS = 0 V)	VSD		1.0		Vdc
Source Current Continuous (Body Diode)	IS		115		mAdc
Source Current Pulsed	ISM		500		mAdc
TurnOn Delay Time	td(on)		7		ns	VDD = 25 Vdc , ID =500 mAdc, RG = 25,RL = 50 ,Vgen = 10 V
TurnOff Delay Time	td(off)		11		ns	VDD = 25 Vdc , ID =500 mAdc, RG = 25,RL = 50 ,Vgen = 10 V

Notes:

1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2. FR5 = 1.00.750.062 in.
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Outline and Dimensions

DIM	MILLIMETERS	INCHES
	MIN	NOM	MAX	MIN	NOM	MAX
A	0.80	0.90	1.00	0.032	0.035	0.039
A1	0.00	0.05	0.10	0.000	0.002	0.004
b	0.30	0.35	0.40	0.012	0.014	0.016
c	0.071	0.083	0.095	0.003	0.003	0.004
D	1.80	1.90	2.00	0.071	0.075	0.079
E	1.15	1.24	1.35	0.045	0.049	0.053
e	0.65REF			0.026REF
e1	1.20	1.30	1.40	0.047	0.051	0.055
L	0.20	0.38	0.56	0.008	0.015	0.022
HE	2.00	2.10	2.40	0.079	0.083	0.095

Notes:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.