High voltage and DC current gain transistor luJing 2SC1623 in SOT23 package for versatile general

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Product Description

Product Overview

High DC current gain and high voltage transistors in SOT-23 package. Designed for general-purpose applications.

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to base voltage	VCBO				60	V
Collector to emitter voltage	VCEO				50	V
Emitter to base voltage	VEBO				5	V
Collector current (DC)	IC				100	mA
Collector power dissipation	PC				200	mW
Junction temperature	Tj				150	°C
Storage temperature range	Tstg		-55		+150	°C
Collector- base breakdown voltage	VCBO	Ic= 100 μA, IE= 0			60	V
Collector- emitter breakdown voltage	VCEO	Ic= 1 mA, IB= 0			50	V
Emitter - base breakdown voltage	VEBO	IE= 100μA, IC= 0			5	V
Collector-base cut-off current	ICBO	VCB= 60 V, IE= 0			100	nA
Emitter cut-off current	IEBO	VEB= 5V, IC=0			100	nA
Collector-emitter saturation voltage	VCE(sat)	IC=100 mA, IB=10mA		0.15	0.3	V
Base - emitter saturation voltage	VBE(sat)	IC=100 mA, IB=10mA		0.86	1	V
Base - emitter voltage	VBE	VCE=6V, IC= 1mA	0.55		0.7	V
DC current gain	hFE	VCE= 6V, IC= 1mA	90		600
Collector output capacitance	Cob	VCB=6V, IE= 0,f=1MHz		3		pF
Transition frequency	fT	VCE= 6V, IE= -10mA		250		MHz