Darlington PNP Silicon Transistor Minos TIP127 Featuring Integrated Damping Diode for High Gain
Product Overview
This PNP Silicon Transistor is a Darlington transistor with an integrated damping diode, designed for high-gain circuits. It is suitable for applications requiring high amplification.
Product Attributes
- Brand: MNS
- Type: PNP Silicon Transistor (Darlington)
- Integrated Component: Damping Diode
Technical Specifications
| Parameter | Symbol | Description | Min | Typical | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | |||||||
| Storage Temperature | Tstg | -65 | 150 | ||||
| Junction Temperature | Tj | 150 | |||||
| Collector Dissipation Power | PC | (Tc=25) | 65 | W | |||
| Collector Dissipation Power | PC | (TA=25) | 2 | W | |||
| Collector-Base Voltage | CBO | -100 | V | ||||
| Collector-Emitter Voltage | CEO | -100 | V | ||||
| Emitter-Base Voltage | EBO | -5 | V | ||||
| Collector Current | IC | -5 | A | ||||
| Collector Current (Pulse) | ICP | -8 | A | ||||
| Base Current | IB | -120 | mA | ||||
| Electrical Characteristics | |||||||
| Collector-Base Breakdown Voltage | BVCBO | -100 | V | IC=1mA, IE=0 | |||
| Collector-Emitter Breakdown Voltage | BVCEO | -100 | V | IC=5mA, IB=0 | |||
| Collector-Emitter Cutoff Current | ICEO | -0.5 | mA | VCE=50V, IB=0 | |||
| Collector-Base Cutoff Current | ICBO | -0.2 | mA | VCB=100V, IE=0 | |||
| Emitter-Base Cutoff Current | IEBO | -2.0 | mA | VEB=5V, IC=0 | |||
| DC Current Gain | HFE | 1000 | VCE=3V, IC=0.5A | ||||
| Collector-Emitter Saturation Voltage | VCE(sat1) | -2.0 | V | IC=3A, IB=12mA | |||
| Collector-Emitter Saturation Voltage | VCE(sat2) | -4.0 | V | IC=5A, IB=20mA | |||
| Base-Emitter On Voltage | VBE(on) | -2.5 | V | VCE=3V, IC=3A | |||
| Common Base Output Capacitance | Cob | 200 | pF | VCB=10V, IE=0, f=0.1MHz | |||
Pin Configuration:
1 - Base (B)
2 - Collector (C)
3 - Emitter (E)
Notes:
1. Exceeding the maximum ratings of the device may cause permanent failure and affect dependability. Please adhere to absolute maximum ratings during circuit design.
2. When installing a heat sink, pay attention to torsional moment and heat sink smoothness.
3. MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
4. Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.