battery management system component Minos MPT037N08 n channel power mosfet with improved switching performance
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Product Description
Product Description
The MPT037N08 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for Battery Management Systems (BMS) and high current switching applications.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Certifications: RoHS
Technical Specifications
| Ordering Code | Package | VDS (V) | RDS(on) @ VGS=10V (m) | ID (A) | EAS (mJ) | PD (W) |
| MPT037N08-P | TO-220 | 85 | 185 (Silicon Limited) / 120 (Package Limited) | 240.2 | 208.3 | |
| MPT037N08-S | TO-263 | 85 | 185 (Silicon Limited) / 120 (Package Limited) | 240.2 | 208.3 |
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| OFF Characteristics | ||||||
| VDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 85 | 95 | -- | V |
| IDSS | Drain-Source Leakage Current | VDS=100V, VGS=0V | -- | -- | 1 | A |
| IDSS | Drain-Source Leakage Current | VDS=80V, VGS=0V @ TC=125C | -- | -- | 100 | A |
| IGSS(F) | Gate-Source Forward Leakage | VGS=+20V | -- | -- | 100 | nA |
| IGSS(R) | Gate-Source Reverse Leakage | VGS=-20V | -- | -- | -100 | nA |
| ON Characteristics | ||||||
| RDS(on) | Drain-Source On-Resistance | VGS=10V, ID=50A | -- | 3 | 3.7 | m |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2.0 | 3.0 | 4.0 | V |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=42.5V, VGS=0, f=1MHz | -- | 6234 | -- | pF |
| Coss | Output Capacitance | VDS=42.5V, VGS=0, f=1MHz | -- | 1181 | -- | pF |
| Crss | Reverse Transfer Capacitance | VDS=42.5V, VGS=0, f=1MHz | -- | 97 | -- | pF |
| Qg | Total Gate Charge | VDD=42.5V, ID=50A, VGS=10V | -- | 124 | -- | nC |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD=42.5V, ID=10A, VGS=10V, RG=3, Resistive Load | -- | 41 | -- | ns |
| tr | Rise Time | VDD=42.5V, ID=10A, VGS=10V, RG=3, Resistive Load | -- | 68 | -- | ns |
| td(off) | Turn-Off Delay Time | VDD=42.5V, ID=10A, VGS=10V, RG=3, Resistive Load | -- | 76 | -- | ns |
| tf | Fall Time | VDD=42.5V, ID=10A, VGS=10V, RG=3, Resistive Load | -- | 44 | -- | ns |
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current | -- | -- | -- | 120 | A |
| ISM | Maximum Pulsed Current | -- | -- | -- | 480 | A |
| VSD | Diode Forward Voltage | VGS=0V, IS=50A | -- | -- | 1.2 | V |
| trr | Reverse Recovery Time | IS=30A, di/dt=100A/us | -- | 80 | -- | ns |
| Qrr | Reverse Recovery Charge | IS=30A, di/dt=100A/us | -- | 112 | -- | uC |
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Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina