Lateral DMOS transistor MICROCHIP LND150N3 G with integral source drain diode and drive requirements
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertexs lateral DMOS technology. It features ESD protection on the gate and is ideal for high voltage applications such as normally-on switches, precision constant current sources, voltage ramp generation, and amplification. Key advantages include freedom from secondary breakdown, low power drive requirements, ease of paralleling, excellent thermal stability, an integral source-drain diode, high input impedance, low CISS, and ESD gate protection.
Product Attributes
- Brand: Supertex inc.
- Website: www.supertex.com
- Certifications: Lead (Pb)-free / RoHS compliant package (-G denotes this)
Technical Specifications
| Part Number | Package | BVDSX/BVDGX (V) | RDS(ON) (max) | IDSS (min) | Packing |
| LND150K1-G | TO-236AB (SOT-23) | 500 | 1.0k | 1.0mA | 3000/Reel |
| LND150N3-G | TO-92 | 500 | 1.0k | 1.0mA | 1000/Bag |
| LND150N3-G P002 | TO-92 | 500 | 1.0k | 1.0mA | 2000/Reel |
| LND150N3-G P003 | TO-92 | 500 | 1.0k | 1.0mA | 2000/Reel |
| LND150N3-G P005 | TO-92 | 500 | 1.0k | 1.0mA | 2000/Reel |
| LND150N3-G P013 | TO-92 | 500 | 1.0k | 1.0mA | 2000/Reel |
| LND150N3-G P014 | TO-92 | 500 | 1.0k | 1.0mA | 2000/Reel |
| LND150N8-G | TO-243AA (SOT-89) | 500 | 1.0k | 1.0mA | 2000/Reel |
| Parameter | Min | Typ | Max | Units | Conditions |
| BVDSX (Drain-to-source breakdown voltage) | 500 | - | - | V | VGS = -10V, ID = 1.0mA |
| VGS(OFF) (Gate-to-source off voltage) | -1.0 | - | -3.0 | V | VGS = 25V, ID = 100nA |
| VGS(OFF) (Change in VGS(OFF) with temperature) | - | - | 5.0 | mV/OC | VGS = 25V, ID = 100nA |
| IGSS (Gate body leakage current) | - | - | 100 | nA | VGS = 20V, VDS = 0V |
| ID(OFF) (Drain-to-source leakage current) | - | - | 100 | nA | VGS = -10V, VDS = 450V |
| ID(OFF) (Drain-to-source leakage current) | - | - | 100 | A | VDS = 0.8V Max Rating, VGS = -10V, TA = 125OC |
| IDSS (Saturated drain-to-source current) | 1.0 | - | 3.0 | mA | VGS = 0V, VDS = 25V |
| RDS(ON) (Static drain-to-source on-state resistance) | - | 850 | 1000 | VGS = 0V, ID = 0.5mA | |
| RDS(ON) (Change in RDS(ON) with temperature) | - | - | 1.2 | %/OC | VGS = 0V, ID = 0.5mA |
| GFS (Forward transconductance) | 1.0 | 2.0 | - | m | VDS = 0V, ID = 1.0mA |
| CISS (Input capacitance) | - | 7.5 | 10 | pF | VGS = -10V, VDS = 25V, f = 1.0MHz |
| COSS (Common source output capacitance) | - | 2.0 | 3.5 | pF | VGS = -10V, VDS = 25V, f = 1.0MHz |
| CRSS (Reverse transfer capacitance) | - | 0.5 | 1.0 | pF | VGS = -10V, VDS = 25V, f = 1.0MHz |
| td(ON) (Turn-on delay time) | - | 0.09 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| tr (Rise time) | - | 0.45 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| td(OFF) (Turn-off delay time) | - | 0.1 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| tf (Fall time) | - | 1.3 | - | s | VDD = 25V, ID = 1.0mA, RGEN = 25 |
| VSD (Diode forward voltage drop) | - | - | 0.9 | V | VGS = -10V, ISD = 1.0mA |
| trr (Reverse recovery time) | - | 200 | - | ns | VGS = -10V, ISD = 1.0mA |
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