Nexperia BC817-25 215 NPN transistor designed for switching and amplification in electronic circuits
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Delivery Time:
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Product Description
Product Overview
The Nexperia BC817 series comprises NPN general-purpose transistors designed for high current applications. These transistors are available in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. They offer three distinct current gain selections, making them versatile for general-purpose switching and amplification tasks. With a collector-emitter voltage of 45 V and a collector current of 500 mA, the BC817 series provides reliable performance for a wide range of electronic circuits.
Product Attributes
- Brand: Nexperia
- Type: NPN General-Purpose Transistor
- Package Type: SOT23 (TO-236AB)
- Complementary PNP Transistor: BC807 series
Technical Specifications
| Model | Package Type | Max VCEO (V) | Max IC (mA) | Min hFE (at 100mA, 1V) | Max hFE (at 100mA, 1V) | Max VCEsat (mV) (at 500mA, 50mA) | Max VBE (V) (at 500mA, 50mA) | Min fT (MHz) (at 10mA, 5V) |
|---|---|---|---|---|---|---|---|---|
| BC817 | SOT23 | 45 | 500 | 100 | 600 | 700 | 1.2 | 100 |
| BC817-16 | SOT23 | 45 | 500 | 100 | 250 | 700 | 1.2 | 100 |
| BC817-25 | SOT23 | 45 | 500 | 160 | 400 | 700 | 1.2 | 100 |
| BC817-40 | SOT23 | 45 | 500 | 250 | 600 | 700 | 1.2 | 100 |
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | Open base; Tamb = 25 C | - | - | 45 | V |
| Collector Current (IC) | Tamb = 25 C | - | - | 500 | mA |
| Peak Collector Current (ICM) | Single pulse; tp 1 ms; Tamb = 25 C | - | - | 1 | A |
| Collector-Base Voltage (VCBO) | Open emitter; Tamb = 25 C | - | - | 50 | V |
| Emitter-Base Voltage (VEBO) | Open collector; Tamb = 25 C | - | - | 5 | V |
| Total Power Dissipation (Ptot) | Tamb 25 C (FR4 PCB, 1 cm collector pad) | - | - | 345 | mW |
| Junction Temperature (Tj) | - | - | - | 150 | C |
| Storage Temperature (Tstg) | - | -65 | - | 150 | C |
| Collector-Base Breakdown Voltage (V(BR)CBO) | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | IC = 10 mA; IE = 0 A; Tamb = 25 C | 45 | - | - | V |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | IE = 100 A; IC = 0 A; Tamb = 25 C | 5 | - | - | V |
| Collector Cut-off Current (ICBO) | VCB = 20 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| Collector Cut-off Current (ICBO) | VCB = 20 V; IE = 0 A; Tj = 150 C | - | - | 5 | A |
| Emitter Cut-off Current (IEBO) | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 500 mA; IB = 50 mA; Tamb = 25 C | - | - | 700 | mV |
| Base-Emitter Voltage (VBE) | IC = 500 mA; IB = 50 mA; Tamb = 25 C | - | - | 1.2 | V |
| Transition Frequency (fT) | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| Collector Capacitance (Cc) | VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 3 | pF |
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