High Frequency Switching MOSFET MIRACLE POWER MS3005X with Low On Resistance and Robust Construction
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The MS3005X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with advanced technology for high-performance applications. It offers a robust combination of 30V drain-source voltage and 30A continuous drain current, with a low on-resistance of 3.9m at VGS = 10V. Key features include reliable and rugged construction, fast switching speeds, and guaranteed 100% EAS (Avalanche Energy). This MOSFET is ideal for high-frequency switching, synchronous rectification, and DC/DC converter applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Miracle Technology
- Green Device Available
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage | 30 | V | ||||
| Current | 30 | A | ||||
| RDS(ON) | VGS = 10V | 3.9 | m | |||
| Avalanche Energy | Single pulse | 64 | mJ | |||
| Avalanche Current | 24 | A | ||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 30 | V | ||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | Tc = 25C | 30 | A | ||
| ID | Drain Current-Continuous | Tc = 100C | 30 | A | ||
| IDM | Drain Current-Pulsed | a | 200 | A | ||
| EAS | Avalanche Energy, Single pulse | b | 64 | mJ | ||
| IAS | Avalanche Current | 24 | A | |||
| PD | Maximum Power Dissipation | @ Tc = 25C | 23 | W | ||
| TSTG | Store Temperature Range | -55 | 150 | C | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance Junction-Case | Max | 5.4 | C/W | ||
| RJA | Thermal Resistance Junction-Ambient | Maxc | 75 | C/W | ||
| Electrical Characteristics | ||||||
| TJ = 25C unless otherwise noted | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 24V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | 1.5 | 2.0 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 20A | - | 3.9 | 4.8 | m |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 4.5V, ID = 20A | - | 5.2 | 6.4 | m |
| gfs | Forward Transconductance | VDS= 5V, ID= 20A | - | 63 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 15V, VGS = 0V, f = 1.0MHz | - | 867 | - | pF |
| Coss | Output Capacitance | - | 434 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 55 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 15V, RL= 0.75, RG = 3,VGS=10V | - | 8.9 | - | ns |
| tr | Turn-On Rise Time | - | 73.9 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 17.7 | - | ns | |
| tf | Turn-Off Fall Time | - | 81 | - | ns | |
| Qg | Total Gate Charge | VDS = 15V, ID = 20A, VGS = 10V | - | 17 | - | nC |
| Qgs | Gate-Source Charge | - | 3.8 | - | nC | |
| Qgd | Gate-Drain Charge | - | 3.2 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V, Force Current | - | - | 30 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, ISD = 1A | - | - | 1 | V |
| trr | Reverse Recovery Time | IF= 20A, di/dt=100A/us, TJ=25C | - | 14 | - | ns |
| Qrr | Reverse Recovery Charge | - | 3 | - | nC | |
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