Electronic circuits small signal diode onsemi BAS16HT1G with fast switching and low leakage features
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Product Description
ON Semiconductor BAS16HT1G - Small Signal Diode
The BAS16HT1G is a small signal diode designed for general-purpose applications. It offers reliable performance and is suitable for various electronic circuits requiring fast switching and low leakage characteristics.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Product Type: Small Signal Diode
- Package: SOD-323
Technical Specifications
| Parameter | Conditions | Min. | Max. | Units |
|---|---|---|---|---|
| Maximum Repetitive Reverse Voltage (VRRM) | 85 | V | ||
| Average Rectified Forward Current (IF(AV)) | 200 | mA | ||
| Non-repetitive Peak Forward Surge Current (IFSM) | Pulse Width = 1.0 second | 600 | mA | |
| Storage Temperature Range (TSTG) | -65 | +150 | C | |
| Operating Junction Temperature (TJ) | -55 | +150 | C | |
| Power Dissipation (PD) | 200 | mW | ||
| Thermal Resistance, Junction to Ambient (RJA) | 600 | C/W | ||
| Breakdown Voltage (VR) | IR = 5.0A | 85 | V | |
| Forward Voltage (VF) | IF = 0.1mA | 715 | mV | |
| Forward Voltage (VF) | IF = 10mA | 855 | mV | |
| Forward Voltage (VF) | IF = 50mA | 1.0 | V | |
| Forward Voltage (VF) | IF = 150mA | 1.25 | V | |
| Reverse Leakage (IR) | VR = 75V | 1.0 | A | |
| Reverse Leakage (IR) | VR = 25V, TA = 150C | 30 | A | |
| Reverse Leakage (IR) | VR = 75V, TA = 150C | 50 | A | |
| Total Capacitance (CT) | VR = 0, f = 1.0MHz | 2.0 | pF | |
| Reverse Recovery Time (trr) | IF = IR = 10mA, IRR = 1.0mA, RL = 100 | 6.0 | ns |
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