Surface mount silicon diode PJSEMI 1SS355WB featuring fast switching speed and surge current handling
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The 1SS355WB is a Silicon Epitaxial Planar Switching Diode designed for surface mount applications. It offers high-speed switching capabilities with a typical reverse recovery time of 1.2ns and high reliability due to its high surge current handling capability. This diode is suitable for applications requiring fast switching and robust performance.
Product Attributes
- Brand: Pingjingsemi
- Material: Silicon
- Package Type: SOD-323W
- Marking Code: A
Technical Specifications
| Parameter | Symbol | 1SS355WB | Unit |
| Absolute Maximum Ratings | |||
| Non-Repetitive Peak Reverse Voltage | VRM | 90 | V |
| DC Reverse Voltage | VR | 80 | V |
| Peak Forward Current | IFM | 225 | mA |
| Average Rectified Output Current | IO | 100 | mA |
| Surge Current (1s) | Isurge | 500 | mA |
| Operating Temperature | TJ | 125 | C |
| Storage Temperature Range | TSTG | -55 to +125 | C |
| Characteristics | |||
| Forward Voltage (IF = 100 mA) | VF | 1.2 | V |
| Reverse Current (VR = 80 V) | IR | 0.1 | A |
| Capacitance Between Terminals (VR = 0.5 V, f = 1 MHz) | CT | 3 | pF |
| Reverse Recovery Time (VR = 6 V, IF = 10 mA, RL = 100 ) | Trr | 4 | nS |
Package Outline
SOD-323W
| Dimension | Symbol | Min | Max | Unit | Mil |
| A | 1.1 | 1.4 | mm | 43 | 55 |
| A1 | 0.08 | 0.2 | mm | 3.1 | 7.9 |
| b | 0.4 | 0.45 | mm | 16 | 18 |
| C | 0.15 | 0.25 | mm | 5.9 | 9.8 |
| D | 2.75 | 2.55 | mm | 108 | 100 |
| E | 1.8 | 1.2 | mm | 70 | 63 |
| E1 | 0.8 | 0.4 | mm | 32 | 16 |
| L1 | 1.4 | mm | 55 | 47 | |
| 9 max |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina