Low Forward Voltage Drop and High Current PAKER SS10L45C Trench MOS Barrier Schottky Rectifier Device

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Product Description

Product Overview

The SS10L45C is a Trench MOS Barrier Schottky Rectifier featuring low forward voltage drop, low power losses, and high current capability. Its advanced trench technology and extremely low thermal resistance ensure high efficiency operation. This rectifier is glass passivated, halogen-free, and RoHS compliant, making it suitable for various applications requiring efficient power conversion.

Product Attributes

Brand: (Pakermicro)
Origin: Shenzhen, China
Material: Molded Plastic, Glass Passivated Junction
Color: Color band denotes cathode end
Certifications: Halogen free and RoHS compliant
Package: SMC (DO-214AB)
Mounting: ANY
Packing: SMC Tape/Reel, 13" reel, 3000 pcs per reel (EIA-481-1)

Technical Specifications

Parameter	Symbol	Limit	Unit	Typical Value (TJ=25C unless otherwise specified)
Maximum repetitive peak reverse voltage	VRRM	45	V
Maximum average forward rectified current	IF(AV)	10	A
Peak forward surge current (8.3 ms single half sine-wave)	IFSM	280	A
Operating junction and storage temperature range	TJ, TSTG	-40 to +150	C
Typical thermal resistance per diode (Mounted on FR-4 PCB)	RJA		C/W	25
Instantaneous forward voltage per diode (IF=5A)	VF(1)	TYP. 0.3, MAX. 0.35	V
Instantaneous forward voltage per diode (IF=10A)	VF(1)	TYP. 0.39, MAX. 0.45	V
Instantaneous reverse current per diode at rated reverse voltage (TJ=25C)	IR(2)	150	uA
Instantaneous reverse current per diode at rated reverse voltage (TJ=125C)	IR(2)	50	mA