Cascode SiC FET transistor Qorvo UJ4C075023K4S 750V 23mW designed for power factor correction modules
Product Overview
The UJ4C075023K4S is a 750V, 23mW G4 SiC FET designed for high-performance power applications. It features a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off device. This design offers standard gate-drive characteristics, allowing it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The UJ4C075023K4S is available in a TO-247-4L package, providing faster switching speeds and cleaner gate waveforms. Its ultra-low gate charge, exceptional reverse recovery characteristics, and low body diode forward voltage make it ideal for switching inductive loads and applications requiring standard gate drive. Typical applications include power factor correction modules, motor drives, induction heating, EV charging, switch mode power supplies, and PV inverters.
Product Attributes
- Brand: UnitedSiC
- Package Type: TO-247-4L
- Technology: SiC FET (Silicon Carbide Field-Effect Transistor)
- Circuit Configuration: Cascode
- ESD Protection: HBM class 2 and CDM class C3
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Units |
|---|---|---|---|---|
| Part Number | UJ4C075023K4S | |||
| Drain-source breakdown voltage | BVDS | VGS=0V, ID=1mA | 750 | V |
| Drain-source on-resistance | RDS(on) | VGS=12V, ID=40A, TJ=25C | 23 | mW |
| Drain-source on-resistance | RDS(on) | VGS=12V, ID=40A, TJ=175C | 29 | mW |
| Gate threshold voltage | VG(th) | VDS=5V, ID=10mA | 4.8 | V |
| Total gate charge | QG | VDS=400V, ID=40A, VGS = 0V to 15V | 37.8 | nC |
| Reverse recovery charge | Qrr | VR=400V, IS=40A, VGS=0V, RG_EXT=5W, di/dt=3100A/ms, TJ=25C | 105 | nC |
| Forward voltage | VFSD | VGS=0V, IS=20A, TJ=25C | 1.23 | V |
| Maximum junction temperature | TJ,max | 175 | C | |
| Operating and storage temperature | TJ, TSTG | -55 to 175 | C | |
| Thermal resistance, junction-to-case | RqJC | 0.49 | C/W | |
| Continuous drain current | ID | TC = 25C | 66 | A |
| Pulsed drain current | IDM | TC = 25C | 196 | A |
| Power dissipation | Ptot | TC = 25C | 306 | W |
| Input capacitance | Ciss | VDS=400V, VGS=0V, f=100kHz | 1400 | pF |
| Output capacitance | Coss | VDS=400V, VGS=0V, f=100kHz | 93 | pF |
| Reverse transfer capacitance | Crss | VDS=400V, VGS=0V, f=100kHz | 2.5 | pF |
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