Surface mount complementary MOSFET Siliup SP1012ACNK 100V fast switching speed ROHS compliant device

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Product Description

Product Overview

The SP1012ACNK is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, it offers fast switching speeds and is ROHS Compliant & Halogen-Free. The device has undergone 100% single pulse avalanche energy testing. It is suitable for applications such as DC-DC converters and motor control.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Model: SP1012ACNK
Type: Complementary MOSFET
Package: PDFN5X6-8L
Certifications: ROHS Compliant & Halogen-Free
Features: Fast switching speed, Surface mount package, 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter	Symbol	N-Channel Conditions	N-Channel Rating	P-Channel Conditions	P-Channel Rating	Unit
Drain-Source Voltage	VDS	100V		-100V		V
Drain-Source Voltage	VDS	VGS=0V , ID=250uA	100	VGS=0V , ID=-250uA	-100	V
Gate-Source Voltage	VGS	20V		20V		V
Gate-Source Voltage	VGS	VGS=20V , VDS=0V	-	VGS=20V , VDS=0V	-	nA (Leakage)
Continuous Drain Current	ID	(Tc=25C)	10A	(Tc=25C)	-7A	A
Continuous Drain Current	ID	VGS = 10V, ID = 2A	-	VGS =-10V, ID =-2A	-	m (RDS(ON))
Static Drain-Source On-Resistance	RDS(ON)	VGS = 10V, ID = 2A	70m (Typ.)	VGS =-10V, ID =-2A	230m (Typ.)	m
Static Drain-Source On-Resistance	RDS(ON)	VGS = 4.5V, ID = 1A	85m (Typ.)	VGS =-4.5V, ID =-1A	240m (Typ.)	m
Pulse Drain Current	IDM	40A		-28A		A
Single pulsed avalanche energy	EAS	25mJ		49mJ		mJ
Power Dissipation	PD	(Tc=25C) 22W		(Tc=25C) 22W		W
Thermal Resistance Junction-to-Case	RJC	5.7 C/W		5.7 C/W		C/W
Storage Temperature Range	TSTG	-55 to 150 C				C
Operating Junction Temperature Range	TJ	-55 to 150 C				C
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0 to 2.5V	VGS=VDS , ID =-250uA	-1.0 to -2.5V	V
Input Capacitance	Ciss	VDS=50V , VGS=0V , f=1MHz	792pF (Typ.)	VDS=-50V , VGS=0V , f=1MHz	721pF (Typ.)	pF
Output Capacitance	Coss	VDS=50V , VGS=0V , f=1MHz	23pF (Typ.)	VDS=-50V , VGS=0V , f=1MHz	30pF (Typ.)	pF
Reverse Transfer Capacitance	Crss	VDS=50V , VGS=0V , f=1MHz	19pF (Typ.)	VDS=-50V , VGS=0V , f=1MHz	18pF (Typ.)	pF
Total Gate Charge	Qg	VDS=50V , VGS=10V , ID=3A	13.6nC (Typ.)	VDS=-50V , VGS=-10V , ID=-3A	16nC (Typ.)	nC
Gate-Source Charge	Qgs	2.1nC (Typ.)		3nC (Typ.)		nC
Gate-Drain Charge	Qgd	1.9nC (Typ.)		2.5nC (Typ.)		nC
Turn-On Delay Time	Td(on)	VDD=50V VGS=10V , RG=3, ID=3A	7nS (Typ.)	VDD=-50V VGS=-10V , RG=6, ID=-3A	9nS (Typ.)	nS
Rise Time	Tr	1.5nS (Typ.)		6.5nS (Typ.)		nS
Turn-Off Delay Time	Td(off)	15.3nS (Typ.)		28nS (Typ.)		nS
Fall Time	Tf	2nS (Typ.)		7.5nS (Typ.)		nS
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	1.2V (Typ.)	VGS=0V , IS=-1A , TJ=25	-1.2V (Typ.)	V
Maximum Body-Diode Continuous Current	IS	10A		-7A		A
Reverse recover time	Trr	IS=10A, di/dt=100A/us, Tj=25	35nS (Typ.)	IS=-7A, di/dt=-100A/us, Tj=25	32nS (Typ.)	nS
Reverse recovery charge	Qrr	21nC (Typ.)		47nC (Typ.)		nC

PDFN5X6-8L Package Information
Symbol	Dimensions In Millimeters	Dimensions In Inches
A	0.900 - 1.000	0.035 - 0.039
A3	0.254 REF.	0.010 REF.
D	4.944 - 5.096	0.195 - 0.201
E	5.974 - 6.126	0.235 - 0.241
D1	1.470 - 1.870	0.058 - 0.074
D2	0.470 - 0.870	0.019 - 0.034
E1	3.375 - 3.575	0.133 - 0.141
D3	4.824 - 4.976	0.190 - 0.196
E2	5.674 - 5.826	0.223 - 0.229
k	1.190 - 1.390	0.047 - 0.055
b	0.350 - 0.450	0.014 - 0.018
e	1.270 TYP.	0.050 TYP.
L	0.559 - 0.711	0.022 - 0.028
L1	0.424 - 0.576	0.017 - 0.023
H	0.574 - 0.726	0.023 - 0.029
	10 - 12	10 - 12