China Siliup SP6026CTM Complementary MOSFET 60V Drain Source Voltage Lead Free Device for Power Management for sale

Siliup SP6026CTM Complementary MOSFET 60V Drain Source Voltage Lead Free Device for Power Management

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP6026CTM is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. This lead-free product is available in a surface mount TO-252-4L package and has undergone 100% Single Pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: Complementary MOSFET
Package: TO-252-4L
Material: Lead-free
Device Code: 6026C

Technical Specifications

Parameter	Symbol	Conditions	N-Channel Typ.	P-Channel Typ.	Units
Product Summary
Drain-Source Voltage	V(BR)DSS		60	-60	V
RDS(on)		@10V	25		m
RDS(on)		@4.5V	32		m
ID			20		A
RDS(on)		@-10V		57	m
RDS(on)		@-4.5V		70	m
ID				-18	A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25)	60	-60	V
Gate-Source Voltage	VGS	(Ta=25)	20	20	V
Continuous Drain Current	ID	(TC=25)	20	-18	A
Continuous Drain Current	ID	(TC=100)	13	-12	A
Pulsed Drain Current	IDM		80	-72	A
Single Pulse Avalanche Energy	EAS		29	48	mJ
Power Dissipation	PD	(TC=25)	40		W
Thermal Resistance Junction-to-Case	RJC		3.1		/W
Storage Temperature Range	TSTG		-55 to 150
Operating Junction Temperature Range	TJ		-55 to 150
N-Channel Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	60	-	V
Drain-Source Leakage Current	IDSS	VDS=48V , VGS=0V , TJ=25	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0 - 2.5	-	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=10A	- 35	-	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=8A	- 46	-	m
Input Capacitance	Ciss	VDS=25V , VGS=0V , f=1MHz	1165	-	pF
Output Capacitance	Coss		53	-	pF
Reverse Transfer Capacitance	Crss		46	-	pF
Total Gate Charge	Qg	VDS=30V , VGS=10V , ID=10A	20	-	nC
Gate-Source Charge	Qgs		4	-	nC
Gate-Drain Charge	Qgd		5	-	nC
Turn-On Delay Time	Td(on)	VDD=30V, VGS=10V , RG=3, ID=10A	7.5	-	nS
Rise Time	Tr		20	-	nS
Turn-Off Delay Time	Td(off)		16	-	nS
Fall Time	Tf		25	-	nS
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	1.2	V
Maximum Body-Diode Continuous Current	IS		20	-	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	35	-	nS
Reverse Recovery Charge	Qrr		53	-	nC
P-Channel Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA	-	-60	V
Drain-Source Leakage Current	IDSS	VDS=-48V , VGS=0V , TJ=25	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =-250uA	-	-1.0 - -2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-2A	-	- 71	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-1A	-	- 93	m
Input Capacitance	Ciss	VDS=-30V , VGS=0V , f=1MHz	-	1090	pF
Output Capacitance	Coss		-	77	pF
Reverse Transfer Capacitance	Crss		-	58	pF
Total Gate Charge	Qg	VDS=-30V , VGS=-10V , ID=-6A	-	23	nC
Gate-Source Charge	Qgs		-	4.2	nC
Gate-Drain Charge	Qg		-	4.8	nC
Turn-On Delay Time	Td(on)	VDD=-30V, VGS=-10V ,RG=3,ID=-10A	-	9.8	nS
Rise Time	Tr		-	6.1	nS
Turn-Off Delay Time	Td(off)		-	44	nS
Fall Time	Tf		-	12.7	nS
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-	-1.2	V
Maximum Body-Diode Continuous Current	IS		-	-18	A
Reverse Recovery Time	Trr	IS=-8A, di/dt=100A/us, TJ=25	-	25	nS
Reverse Recovery Charge	Qrr		-	31	nC
Package Information (TO-252-4L)
Symbol	Dimensions In Millimeters	Min.	Max.
A		2.20	2.40
A1		0	0.15
b		0.40	0.60
b2		0.50	0.80
b3		5.20	5.50
c2		0.45	0.55
D		5.40	5.80
D1		4.57	-
E		6.40	6.80
E1		3.81	-
e	REF.	1.27
F		0.40	0.60
H		9.40	10.20
L		1.40	1.77
L1		2.40	3.00
L4		0.80	1.20