Complementary MOSFET Siliup SP1022CP8 100V Drain Source Voltage 2.5A Continuous Current SOP8L Package
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Negotiable
MOQ:
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Delivery Time:
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Product Description
SP1022CP8 100V Complementary MOSFET
The SP1022CP8 is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capabilities, making it suitable for applications such as battery protection, load switching, and power management. It features a lead-free product acquisition and is available in a surface mount SOP-8L package. The SP1022CP8 has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Lead Free: Yes
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | P-Channel Conditions | Value | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | ||
| -100 | V | ||||
| Gate-Source Voltage | VGS | 20 | V | ||
| 20 | V | ||||
| Continuous Drain Current | ID | 2.5 | A | ||
| -2.5 | A | ||||
| Pulsed Drain Current | IDM | 10 | A | ||
| -10 | A | ||||
| Single Pulse Avalanche Energy | EAS | (VDD=50V,VGS=10V,L=0.5mH,RG=25) | (VDD=-50V,VGS=-10V,L=0.5mH,RG=25) | 3 | mJ |
| 12 | mJ | ||||
| Power Dissipation | PD | (Ta=25) | (Ta=25) | 1.8 | W |
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | /W | ||
| Storage Temperature Range | TSTG | -55 to 150 | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | VGS=0V, ID=-250uA | 100 | V |
| -100 | V | ||||
| Drain-Source Leakage Current | IDSS | VDS=80V, VGS=0V, TJ=25 | VDS=-80V, VGS=0V, TJ=25 | - | uA |
| - | uA | ||||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | VGS=20V, VDS=0V | 100 | nA |
| 100 | nA | ||||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | VGS=VDS, ID =-250uA | 1.0 to 2.5 | V |
| -1.0 to -2.5 | V | ||||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=2A | VGS=-10V, ID=-2A | 160 to 210 | m |
| 230 to 300 | m | ||||
| VGS=4.5V, ID=1.5A | VGS=-4.5V, ID=-1A | 230 to 300 | m | ||
| 240 to 320 | m | ||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | VDS=-50V, VGS=0V, f=1MHz | 498 | pF |
| 721 | pF | ||||
| Output Capacitance | Coss | 30 | pF | ||
| Reverse Transfer Capacitance | Crss | 19 | pF | ||
| 18 | pF | ||||
| Total Gate Charge | Qg | VDS=50V, VGS=10V, ID=2A | VDS=-50V, VGS=-10V, ID=-2A | 13.6 | nC |
| 16 | nC | ||||
| Gate-Source Charge | Qgs | 2.1 | nC | ||
| 3 | nC | ||||
| Gate-Drain Charge | Qg d | 1.9 | nC | ||
| 2.5 | nC | ||||
| Turn-On Delay Time | Td(on) | VDD=50V, VGS=10V, RG=3, ID=2A | VDD=-50V, VGS=-10V, RG=3, ID=-2A | 7 | nS |
| 9 | nS | ||||
| Rise Time | Tr | 1.5 | nS | ||
| 6.5 | nS | ||||
| Turn-Off Delay Time | Td(off) | 15.3 | nS | ||
| 28 | nS | ||||
| Fall Time | Tf | 2 | nS | ||
| 7.5 | nS | ||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | VGS=0V, IS=-1A, TJ=25 | - | V |
| - | V | ||||
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | ||
| -2.5 | A | ||||
| Reverse Recovery Time | Trr | IS=2.5A, di/dt=100A/us, TJ=25 | IS=-2.5A, di/dt=-100A/us, Tj=25 | 38 | nS |
| 35 | nS | ||||
| Reverse Recovery Charge | Qrr | 27 | nC | ||
| 45 | nC |
Package Information (SOP-8L)
| Symbol | Dimensions (mm) |
|---|---|
| A | 1.35 - 1.75 |
| A1 | 0.10 - 0.25 |
| A2 | 1.35 - 1.55 |
| b | 0.33 - 0.51 |
| c | 0.17 - 0.25 |
| D | 4.80 - 5.00 |
| e | 1.27 REF. |
| E | 5.80 - 6.20 |
| E1 | 3.80 - 4.00 |
| L | 0.40 - 1.27 |
| 0 - 8 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP1022CP8 | SOP-8L | 4000 |
Marking
Device Code: 1022C
Week Code: * (Indicated by an asterisk)
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