High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers

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Product Description

Product Overview

The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability (10us). This product is ideal for inverter applications in motor drives, AC and DC servo drive amplifiers, and uninterruptible power supplies.

Product Attributes

Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Maximum Ratings
Collector-Emitter Breakdown Voltage	VCE				1200	V DC
Collector Current, limited by Tjmax	IC	TC= 25C			20	A
Collector Current, limited by Tjmax	IC	TC= 100C			10	A
Diode Forward Current, limited by Tjmax	IF	TC= 25C			20	A
Diode Forward Current, limited by Tjmax	IF	TC= 100C			10	A
Continuous Gate-Emitter Voltage	VGE				20	V
Transient Gate-Emitter Voltage	VGE				30	V
Turn off Safe Operating Area		VCE1200V, Tj 150C			40	A
Pulsed Collector Current, VGE=15V, tp limited by Tjmax	ICM				40	A
Diode Pulsed Current, tp limited by Tjmax	IFpuls				40	A
Short Circuit Withstand Time, VGE= 15V, VCC=900VVCEM1200V	Tsc				10	s
Power Dissipation , Tj=175C,Tc=25C	Ptot				157	W
Electrical Characteristics of the IGBTTj= 25unless otherwise specified
Static Collector-Emitter Breakdown Voltage	BVCES	VGE=0V, IC=250A	1200	-	-	V
Gate Threshold Voltage	VGE(th)	VGE=VCE, IC=500A	5.0	5.8	6.6	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC=10A				V
Collector-Emitter Saturation Voltage	VCE(sat)	Tj=25C		1.85		V
Collector-Emitter Saturation Voltage	VCE(sat)	Tj=125C		2.15		V
Collector-Emitter Saturation Voltage	VCE(sat)	Tj=150C		2.25	2.20	V
Zero Gate Voltage Collector Current	ICES	VCE=1200V, VGE=0V				mA
Zero Gate Voltage Collector Current	ICES	Tj= 25C		0.25		mA
Zero Gate Voltage Collector Current	ICES	Tj=150C		5.00		mA
Gate-Emitter Leakage Current	IGES	VCE= 0V, VGE= 20V			400	nA
Input Capacitance	Cies	VCE= 25V, VGE= 0V, f = 1MHz		0.75		nF
Reverse Transfer Capacitance	Cres			0.035		nF
Gate Charge	QG	VCC=960V,IC=10A, VGE=15V		0.08		uC
Short Circuit Collector Current	ISC	VGE=15V, tsc10us, Vcc=900V,Tj150C		50		A
Operating Junction Temperature	Tj		-40		+175	C
Storage Temperature	Ts		-55		+150	C
Soldering Temperature, wave soldering 1.6mm (0.063in.) from case for 10s					260	C
Electrical Characteristics of the DiodeTj= 25unless otherwise specified
Static Diode Forward Voltage	VF	IF= 10A				V
Static Diode Forward Voltage	VF	Tj= 25C		2.0		V
Static Diode Forward Voltage	VF	Tj= 125C		2.1		V
Static Diode Forward Voltage	VF	Tj= 150C		2.1		V
Switching Characteristic, Inductive Load
Dynamic, at Tj= 25
Turn-on Delay Time	td(on)	VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47		85		ns
Rise Time	tr			50		ns
Turn-on Energy	Eon			0.98		mJ
Turn-off Delay Time	td(off)			262		ns
Fall Time	tf			140		ns
Turn-off Energy	Eoff			0.48		mJ
Dynamic, at Tj= 125
Turn-on Delay Time	td(on)	VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47		90		ns
Rise Time	tr			60		ns
Turn-on Energy	Eon			1.33		mJ
Turn-off Delay Time	td(off)			285		ns
Fall Time	tf			150		ns
Turn-off Energy	Eoff			0.9		mJ
Dynamic, at Tj= 150
Turn-on Delay Time	td(on)	VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47		95		ns
Rise Time	tr			65		ns
Turn-on Energy	Eon			1.68		mJ
Turn-off Delay Time	td(off)			308		ns
Fall Time	tf			160		ns
Turn-off Energy	Eoff			1.05		mJ
Electrical Characteristics of the DIODE
Dynamic, at Tj= 25
Reverse Recovery Current	Irr	IF=10A, VR=600V, -di/dt=500A/s		12.5		A
Reverse Recovery Charge	Qrr			0.9		uC
Reverse Recovery Energy	Erec			0.25		mJ
Dynamic, at Tj= 125
Reverse Recovery Current	Irr	IF=10A, VR=600V, -di/dt=500A/s		14.4		A
Reverse Recovery Charge	Qrr			1.7		uC
Reverse Recovery Energy	Erec			0.5		mJ
Dynamic, at Tj= 150
Reverse Recovery Current	Irr	IF=10A, VR=600V, -di/dt=500A/s		15.3		A
Reverse Recovery Charge	Qrr			2.0		uC
Reverse Recovery Energy	Erec			0.58		mJ
Thermal Resistance
IGBT Thermal Resistance, Junction - Case	Rth(j-c)				0.95	K/W
Diode Thermal Resistance, Junction - Case	Rth(j-c)				1.70	K/W
Thermal Resistance, Junction - Ambient	Rth(j-a)				40	K/W