Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions

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Product Description

Product Overview

The GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This MOSFET is designed for applications requiring high efficiency and reliability.

Product Attributes

Brand: XCH Semiconductor
Series: Multi-EPI Super-Junction
Channel Type: N-channel
Technology: Multi-EPI Super-Junction

Technical Specifications

Model	PKG	VDSS (V)	ID (A)	IDM (A)	VGSS (V)	EAS (mJ)	IAR (A)	EAR (mJ)	dv/dt (V/ns)	PD (W)	TJ, TSTG (C)	RJC (C/W)	BVDSS (V)	IDSS (A)	IGSS (nA)	VGS(th) (V)	RDS(on) ()	gFS (S)	Ciss (pF)	Coss (pF)	Crss (pF)	td(on) (ns)	tr (ns)	td(off) (ns)	tf (ns)	Qg (nC)	Qgs (nC)	Qgd (nC)	IS (A)	ISM (A)	VSD (V)	trr (ns)	Qrr (C)
GSW25N65EF	TO-247	650	25* (TC=25), 15* (TC=100)	53	30	500	4	1.2	15	210	-55 to +150	0.58	650 (TJ=25), 700 (TJ=150)	1 (TJ=150)	100	2-4	0.14 (VGS=10V, ID=12A)	16 (VDS=40V, ID=12A)	1650	90	9	28	19	140	12	110-140	9	15	25	75	0.9-1.5 (IS=12A)	190 (IS=12A, dIF/dt=100A/s)	6
GSA25N65EF	TO-220F	650	25* (TC=25), 15* (TC=100)	53	30	500	4	1.2	15	35	-55 to +150	3.7	650 (TJ=25), 700 (TJ=150)	1 (TJ=150)	100	2-4	0.14 (VGS=10V, ID=12A)	16 (VDS=40V, ID=12A)	1650	90	9	28	19	140	12	110-140	9	15	25	75	0.9-1.5 (IS=12A)	190 (IS=12A, dIF/dt=100A/s)	6