20V Complementary MOSFET with High Density Cell Design and Low On Resistance Siliup SP2024KCTL Device
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Product Description
Product Overview
The SP2024KCTL is a 20V N- and P-Channel complementary MOSFET designed with trench technology for superior performance. It features a supper high-density cell design, resulting in extremely low Rds(on) and exceptional ON resistance with maximum DC current capability. This ESD protected device is suitable for driver applications including relays, solenoids, lamps, and hammers, as well as power supply converters and load/power switching for portable devices. The device is manufactured by Shanghai Siliup Semiconductor Technology Co. Ltd.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Type: N- and P-Channel Complementary MOSFET
- Voltage Rating: 20V
- Package: SOT-563
- ESD Protection: HBM 2KV
- Device Code Marking: 24K
Technical Specifications
| Parameter | N-Channel (Q1) Typ. Value | P-Channel (Q2) Typ. Value | Unit |
|---|---|---|---|
| Summary (Typical) | |||
| V(BR)DSS | 20V | -20V | V |
| RDS(on)@4.5V | 250m | - | |
| RDS(on)@2.5V | 350m | - | |
| ID@4.5V | 0.75A | - | A |
| RDS(on)@-4.5V | - | 430m | |
| RDS(on)@-2.5V | - | 620m | |
| ID@-4.5V | - | -0.66A | A |
| Absolute Maximum Ratings (Ta=25) | |||
| Power Dissipation (PD) | 0.15 | W | |
| Junction Temperature (TJ) | 150 | ||
| Storage Temperature (TSTG) | -55~ +150 | ||
| Maximum Ratings - N-Channel Q1 (Ta=25) | |||
| Drain-Source Voltage (VDS) | 20 | V | |
| Gate-Source Voltage (VGS) | 12 | V | |
| Continuous Drain Current (ID) | 0.75 | A | |
| Maximum Ratings - P-Channel Q2 (Ta=25) | |||
| Drain-Source Voltage (VDS) | -20 | V | |
| Gate-Source Voltage (VGS) | 10 | V | |
| Continuous Drain Current (ID) | -0.66 | A | |
| Electrical Characteristics - N-Channel Q1 (TA=25C) | |||
| Drain-source breakdown voltage (V(BR)DSS) | 20 | - | V |
| Zero gate voltage drain current (IDSS) | 1 | - | A |
| Gate-body leakage current (IGSS) | 10 | - | A |
| Gate threshold voltage (VGS(th)) | 0.35 - 0.65 | - | V |
| Drain-source on-resistance (RDS(on)) @ VGS=4.5V, ID=0.5A | 0.25 - 0.38 | - | |
| Drain-source on-resistance (RDS(on)) @ VGS=2.5V, ID=0.2A | 0.35 - 0.45 | - | V |
| Input Capacitance (Ciss) | 79 - 120 | - | pF |
| Output Capacitance (Coss) | 13 - 20 | - | pF |
| Reverse Transfer Capacitance (Crss) | 9 - 15 | - | pF |
| Turn-on delay time (td(on)) | 6.7 | - | ns |
| Turn-on rise time (tr) | 4.8 | - | ns |
| Turn-off delay time (td(off)) | 17.3 | - | ns |
| Turn-off fall time (tf) | 7.4 | - | ns |
| Body Diode Voltage (VSD) | 0.7 - 1.3 | - | V |
| Electrical Characteristics - P-Channel Q2 (TA=25C) | |||
| Drain-source breakdown voltage (V(BR)DSS) | - | -20 | V |
| Zero gate voltage drain current (IDSS) | - | -1 | A |
| Gate-body leakage current (IGSS) | - | 10 | A |
| Gate threshold voltage (VGS(th)) | - | -0.35 - -1.0 | V |
| Drain-source on-resistance (RDS(on)) @ VGS=-4.5V, ID=-0.5A | - | 0.43 - 0.52 | |
| Drain-source on-resistance (RDS(on)) @ VGS=-2.5V, ID=-0.2A | - | 0.62 - 0.7 | V |
| Input Capacitance (Ciss) | - | 113 | pF |
| Output Capacitance (Coss) | - | 15 | pF |
| Reverse Transfer Capacitance (Crss) | - | 9 | pF |
| Turn-on delay time (td(on)) | - | 9 | ns |
| Turn-on rise time (tr) | - | 5.7 | ns |
| Turn-off delay time (td(off)) | - | 32.6 | ns |
| Turn-off fall time (tf) | - | 20.3 | ns |
| Diode Forward voltage (VSD) | - | -1.2 | V |
| Package Information (SOT-563) | |||
| Symbol | Dimensions (mm) Min | Dimensions (mm) Max | Reference |
| A | 0.525 | 0.600 | |
| A1 | 0.000 | 0.050 | |
| e | 0.450 | 0.550 | |
| c | 0.090 | 0.160 | |
| D | 1.500 | 1.700 | |
| b | 0.170 | 0.270 | |
| E1 | 1.100 | 1.300 | |
| E | 1.500 | 1.700 | |
| L | 0.100 | 0.300 | |
| L1 | 0.200 | 0.400 | |
| 7Ref. | |||
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