power transistor Slkor SL90P03G with 30 volt drain source voltage and robust avalanche pulse protection

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Product Description

Product Overview

This Power MOSFET utilizes advanced TRENCH technology, engineered to minimize conduction losses, deliver superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. Its design is optimized for efficiency and reliability in demanding applications.

Product Attributes

Brand: SLKORMicro
Model: SL90P03G
Package: PDFN3*3-8L
Technology: TRENCH
Testing: 100% avalanche tested

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
Drain-source Voltage	VDS	30	V
Gate-source Voltage	VGS	±20	V
Continuous Drain Current	ID	90	A	TC=25°C
Continuous Drain Current	ID	48	A	TC=100°C
Maximum Power Dissipation	PD	31	W	TC=25°C
Avalanche energy, single Pulse	EAS	39	mJ	L=0.5mH (note2)
Operating Junction And Storage Temperature	Tj,Tstg	-55 To 150	°C
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	TL	300	°C
Junction-to-Case Thermal Resistance	RθJC	4	°C/W	Max
Drain-source breakdown voltage	BVDSS	30	V	VGS=0V, ID= 250µA
Zero gate voltage drain current	IDSS	1	µA	VDS= 24V, VGS=0V
Gate-source leakage current	IGSS	±10	uA	VGS=±20V, VDS=0V
Gate threshold voltage	VGS(th)	1.1 - 2.1	V	VDS=VGS, ID= 250µA (Min. Typ. Max.)
Drain-source on-state resistance	RDS(on)	3.6	mΩ	VGS= 10V, ID= 20A (Typ.)
Drain-source on-state resistance	RDS(on)	5.3	mΩ	VGS= 4.5V, ID= 18A (Typ.)
Input Capacitance	Ciss	1859	PF	VGS=0V, VDS= 15V, f=1.0MHz (Typ.)
Output Capacitance	Coss	260	PF	VGS=0V, VDS= 15V, f=1.0MHz (Typ.)
Reverse Transfer Capacitance	Crss	212	PF	VGS=0V, VDS= 15V, f=1.0MHz (Typ.)
Turn-on delay time	td(on)	9.6	nS	VDS=15V, VGS= 10V, RG= 3.9Ω, ID= 15A, RL=1Ω (Typ.)
Turn-on Rise time	tr	23.4	nS	VDS=15V, VGS= 10V, RG= 3.9Ω, ID= 15A, RL=1Ω (Typ.)
Turn-off delay time	td(off)	62.8	nS	VDS=15V, VGS= 10V, RG= 3.9Ω, ID= 15A, RL=1Ω (Typ.)
Turn-off Fall time	tf	23	nS	VDS=15V, VGS= 10V, RG= 3.9Ω, ID= 15A, RL=1Ω (Typ.)
Gate Total Charge	QG	48	nC	VGS= 10V, VDS= 25V, ID= 14A (Typ.)
Gate-Source Charge	QgS	3.4	nC	VGS= 10V, VDS= 25V, ID= 14A (Typ.)
Gate-Drain Charge	Qgd	14	nC	VGS= 10V, VDS= 25V, ID= 14A (Typ.)
Body Diode Forward Voltage	VSD	0.75 - 1.1	V	VGS=0V, ISD= 1A, T J = 25°C (Typ. Max.)
Body Diode Reverse Recovery Time	Trr	18.2	ns	TJ=25°C, IF= 2A, VGS=0V, di/dt =100A/µs (Typ.)
Body Diode Reverse Recovery Charge	Qrr	9.2	nC	TJ=25°C, IF= 2A, VGS=0V, di/dt =100A/µs (Typ.)