Silicon Epitaxial Planar Transistor Model Slkor MMDT5401 Suitable for High Voltage Amplifier Circuits
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Product Description
Product Overview
The MMDT5401 is a PNP Silicon Epitaxial Planar Transistor designed for high voltage amplifier applications. It offers specific DC current gain characteristics and breakdown voltage ratings, making it suitable for various electronic circuits requiring amplification in high voltage environments.
Product Attributes
- Type: PNP Silicon Epitaxial Planar Transistor
- Model: MMDT5401
- Package: SOT-363
- Manufacturer: SLKOR Microelectronics
Technical Specifications
| Absolute Maximum Ratings (Ta = 25) | Symbol | Value | Unit | |
|---|---|---|---|---|
| Collector Base Voltage | -VCBO | 160 | V | |
| Collector Emitter Voltage | -VCEO | 150 | V | |
| Emitter Base Voltage | -VEBO | 5 | V | |
| Collector Current Continuous | -IC | 600 | mA | |
| Power Dissipation | Ptot | 200 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55 to +150 | ||
| Characteristics at Ta = 25 | Symbol | Min. | Max. | Unit | |
|---|---|---|---|---|---|
| DC Current Gain | at -VCE = 5 V, -IC = 1 mA | hFE | 50 | - | - |
| at -VCE = 5 V, -IC = 10 mA | hFE | 60 | 240 | - | |
| at -VCE = 5 V, -IC = 50 mA | hFE | 50 | - | - | |
| Collector Base Cutoff Current at -VCB = 120 V | -ICBO | - | 50 | nA | |
| Emitter Base Cutoff Current at -VEB = 3 V | -IEBO | - | 50 | nA | |
| Collector Base Breakdown Voltage at -IC = 100 A | -V(BR)CBO | 160 | - | V | |
| Collector Emitter Breakdown Voltage at -IC = 1 mA | -V(BR)CEO | 150 | - | V | |
| Emitter Base Breakdown Voltage at -IE = 10 A | -V(BR)EBO | 5 | - | V | |
| Collector Emitter Saturation Voltage | at -IC = 10 mA, -IB = 1 mA | -VCE(sat) | - | 0.2 | V |
| at -IC = 50 mA, -IB = 5 mA | -VCE(sat) | - | 0.5 | V | |
| Base Emitter Saturation Voltage | at -IC = 10 mA, -IB = 1 mA | -VBE(sat) | - | 1 | V |
| at -IC = 50 mA, -IB = 5 mA | -VBE(sat) | - | 1 | V | |
| Gain Bandwidth Product at -VCE = 10 V, -IC = 10 mA, f = 100 MHz | fT | 100 | 300 | MHz | |
| Output Capacitance at -VCB=10 V, f = 1 MHz | Cobo | - | 6 | pF | |
| Simplified outline(SOT-363) Pinout | |||||
|---|---|---|---|---|---|
| Pin 1 | Pin 2 | Pin 3 | Pin 4 | Pin 5 | Pin 6 |
| Emitter | Base | Collector | Emitter | Base | Collector |
| DIMENSIONS (mm) | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A | A1 | bp | c | D | E | e | e1 | HE | Lp | Q | w | v | y |
| 0.1 | 0.30 | 0.20 | 2.2 | 1.8 | 0.25 | 0.10 | 1.35 | 1.15 | 0.65 | e | 1.3 | 2.2 | 2.0 |
| 0.2 | 0.1 | 0.2 | 0.45 | 0.15 | 0.25 | 0.15 | 1.1 | 0.8 | - | - | - | - | - |
| Fig.1 Max Power Dissipation vs Ambient Temperature | ||||
|---|---|---|---|---|
| Ambient Temperature: Ta () | 0 | 25 | 100 | 150 |
| Power Dissipation: Ptot (mW) | 100 | 200 | 50 | 0 |
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